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INA4290A2IRGVT

Texas Instruments

INA4290A2IRGVT by Texas Instruments

Texas Instruments' INA4290A2IRGVT is a 4-function operational amplifier with 12uV max input offset voltage and 160dB nominal CMRR. Ideal for automotive applications, it operates from -40 to 125°C, with a supply voltage of 5V and max bias current of 30uA.

Median Price

$7.110

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 205 parts In-Stock

1+ parts

$8.920

100+ parts

$5.890

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205

$8.920

$5.890

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Mouser Electronics

USA . 101 parts In-Stock

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-

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$5.300

10k+ parts

$5.080

101

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$5.080

Distributors (In-Stock)

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Digiode

USA . 60 parts In-Stock

1+ parts

$8.882

100+ parts

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60

$8.882

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Vyrian

USA . 5,351 parts In-Stock

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 968 parts In-Stock

1+ parts

$1.715

100+ parts

-

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$2.304

10k+ parts

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968

$1.715

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$2.304

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DigiPath Technology Company

USA . 360 parts In-Stock

1+ parts

$1.888

100+ parts

-

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360

$1.888

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ChromeModa Solutions

Germany . 3,292 parts In-Stock

1+ parts

$1.927

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$1.580

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3,292

$1.927

$1.580

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IDEA Electronic Components Group

UK . 258 parts In-Stock

1+ parts

$1.927

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$1.734

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258

$1.927

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$1.734

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Microchip USA

USA . 2,201 parts In-Stock

1+ parts

$2.270

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$2.250

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$2.240

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$2.240

2,201

$2.270

$2.250

$2.240

$2.240

Ampacity Inc.

Singapore . 26 parts In-Stock

1+ parts

$4.500

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$4.500

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Corohmni

South Africa . 249 parts In-Stock

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$7.010

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249

$7.010

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Corphita

USA . 2,788 parts In-Stock

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$8.415

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$8.415

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AZTECH Wire

Italy . 399 parts In-Stock

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$10.412

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$10.412

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Continental Prestige Electronics

USA . 4,925 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Argo Parts USA

USA . 914 parts In-Stock

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Bastille Electronics

Australia . 550 parts In-Stock

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Overview

Discover the unparalleled quality and precision of Texas Instruments with the INA4290A2IRGVT operational amplifier. This innovative product boasts 4 functions in a compact square package, ideal for automotive applications. Experience the benefits of a low-offset, high common mode rejection ratio, and wide supply voltage range. With Texas Instruments' reputation for excellence, you can trust that this amplifier delivers unmatched performance and reliability. Upgrade your designs today with the superior value of the INA4290A2IRGVT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and thermal stability, making the product suitable for a variety of environments.

Maximum Input Offset Voltage: 12 uV

Low input offset voltage ensures accuracy in signal processing applications.

Surface Mount: YES

Surface mount packaging allows for easy installation and efficient use of space on circuit boards.

No. of Functions: 4

Multiple functions in one component offer versatility and cost-efficiency in circuit design.

Package Shape: SQUARE

Square package shape facilitates easy integration and alignment on circuit boards.

Nominal Common Mode Reject Ratio: 160 dB

High common mode reject ratio ensures accurate differential signal processing in noisy environments.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage, making it compatible with most systems.

No. of Terminals: 16

Sufficient number of terminals for versatile connectivity and functionality in circuit designs.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Multiple package styles offer flexibility in mounting, cooling, and space-saving.

Maximum Supply Voltage Limit: 22 V

Wide supply voltage range allows for flexibility in voltage requirements.

Maximum Operating Temperature: 125 °C

High operating temperature ensures reliability in demanding conditions.

Maximum Bias Current (IIB) @25°C: 30 uA

Low bias current ensures minimal power consumption and accurate signal processing.

Maximum Common Mode Voltage: 120 V

High common mode voltage tolerance enables robust performance in various environments.

Frequency Compensation: YES

Frequency compensation improves stability and performance in feedback systems.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for use in extreme conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality terminal finish ensures reliable connections and corrosion resistance.

Terminal Position: QUAD

Quad terminal position offers versatility in connectivity and circuit layout.

Low-Offset: YES

Low offset ensures accurate signal amplification and processing.

Maximum Seated Height: 1 mm

Low profile design ensures space-saving in compact electronic devices.

Width: 4 mm

Compact width allows for efficient placement on circuit boards.

Maximum Time At Peak Reflow Temperature (s): 30

Reflow time limit ensures safe and reliable soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable solder joints during assembly.

Length: 4 mm

Compact length offers space-saving benefits in circuit design.

Temperature Grade: AUTOMOTIVE

Automotive-grade quality ensures reliability in automotive applications.

Nominal Unity Gain Bandwidth: 1100 kHz

High unity gain bandwidth allows for high-frequency signal processing.

Minimum Common Mode Reject Ratio: 140 dB

High common mode reject ratio ensures accurate signal processing in noisy environments.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and ensures safety.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifier design offers versatile signal processing capabilities.

Maximum Supply Current: 1.6 mA

Low supply current consumption for efficient power usage.

Architecture: TRANSCONDUCTANCE

Transconductance architecture provides high-performance signal amplification and processing.

Packing Method: TR

TR packing method offers convenience in packaging and handling during production.

Nominal Slow Rate: 2 V/us

Slow rate ensures gradual and smooth signal amplification.

Terminal Pitch: 0.65 mm

Fine terminal pitch allows for compact design and high-density circuit layouts.

Technical Specifications

Operational Amplifiers (Op Amps) INA4290A2IRGVT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Transconductance

Total Functions:

4

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.1 MHz

Maximum Common Mode Voltage:

120 V

Nominal Common Mode Rejection Ratio (CMRR ):

160 dB

Minimum Common Mode Rejection Ratio (CMRR ):

140 dB

Input Offset Voltage Limit:

12 uV

Nominal Slew Rate:

2 V/us

Maximum Bias Current (IIB) @25 °C:

30 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

22 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

1.6 mA

Physical Characteristics

Length:

0.157 in (4 mm)

Width:

0.157 in (4 mm)

Maximum Seated Height:

0.039 in (1 mm)

Total Terminals:

16

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Quad

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Standards

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Chip Carrier, Heat Sink/Slug, Very Thin Profile

Trade Compliance

INA4290A2IRGVT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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