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INA321E/250G4

Texas Instruments

INA321E/250G4 by Texas Instruments

INA321E/250G4 by Texas Instruments is an instrumentation amplifier with 500uV max input offset voltage, 0.00001uA max average bias current, and 5V nominal voltage. Ideal for military applications due to its -55 to 125 °C operating temperature range and 90dB min common mode reject ratio.

Median Price

$5.760

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 201 parts In-Stock

1+ parts

$5.760

100+ parts

$3.670

1k+ parts

$2.870

10k+ parts

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201

$5.760

$3.670

$2.870

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Distributors (In-Stock)

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Nova Conductors

Japan . 69 parts In-Stock

1+ parts

$3.200

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69

$3.200

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Digiode

USA . 1,301 parts In-Stock

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$4.152

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1,301

$4.152

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Chip Stock

USA . 30,270 parts In-Stock

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Vyrian

USA . 2,302 parts In-Stock

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Corohmni

South Africa . 85 parts In-Stock

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$2.837

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$2.837

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Argo Parts USA

USA . 4,782 parts In-Stock

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$3.200

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4,782

$3.200

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Advanced Electronics

New Zealand . 150 parts In-Stock

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$3.264

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$3.264

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$3.264

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150

$3.264

$3.264

$3.264

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Ampacity Inc.

Singapore . 431 parts In-Stock

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$3.710

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431

$3.710

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Semicontronic

India . 124 parts In-Stock

1+ parts

$3.710

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$3.617

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$3.599

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$3.710

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$3.599

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Corphita

USA . 150 parts In-Stock

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$3.933

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$3.933

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Parana Technologies

USA . 1,053 parts In-Stock

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$4.932

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$5.468

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1,053

$4.932

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$5.468

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DigiPath Technology Company

USA . 1,241 parts In-Stock

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$5.431

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$4.997

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1,241

$5.431

$4.997

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ChromeModa Solutions

Germany . 3,759 parts In-Stock

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$5.542

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$4.544

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3,759

$5.542

$4.544

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IDEA Electronic Components Group

UK . 1,981 parts In-Stock

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$5.542

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$4.988

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AZTECH Wire

Italy . 408 parts In-Stock

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$13.377

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Microchip USA

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Netroflash

USA . 100 parts In-Stock

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$3.136

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$3.040

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$2.976

100

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$3.040

$2.976

Perfect Parts

USA . 43 parts In-Stock

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Overview

Experience superior performance and precision with the Texas Instruments INA321E/250G4 instrumentation amplifier. Designed with quality in mind, this device offers unparalleled accuracy and reliability for a wide range of applications. From industrial controls to medical instrumentation, this amplifier provides exceptional value and benefits to customers looking for high-quality signal processing solutions. Trust in Texas Instruments' reputation for excellence and choose the INA321E/250G4 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the product suitable for various environments.

Maximum Input Offset Voltage: 500 uV

Low offset voltage ensures accurate measurements and precision.

Maximum Average Bias Current (IIB): 0.00001 uA

Low bias current helps in reducing errors and improving stability.

Surface Mount: YES

Ease of installation and space-saving design for compact applications.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard power supplies, making it easy to integrate into existing systems.

Power Supplies (V): 3/5

Can operate with a range of power supply voltages, increasing flexibility.

No. of Terminals: 8

Sufficient terminals for connecting to other components and peripherals.

Maximum Input Offset Current (IIO): 0.00001 uA

Low input offset current leads to improved accuracy in signal processing.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Compact design for space-constrained applications and efficient heat dissipation.

Maximum Non Linearity: 0.01 %

High linearity ensures minimal distortion in signal amplification.

Maximum Supply Voltage Limit: 7.5 V

Safety feature to prevent damage from overvoltage conditions.

Maximum Operating Temperature: 125 °C

Suitable for operation in high-temperature environments without performance degradation.

Minimum Voltage Gain: 5

Able to amplify low-level signals effectively for accurate measurements.

Minimum Operating Temperature: -55 °C

Capable of functioning in extremely cold conditions.

Terminal Finish: NICKEL PALLADIUM GOLD SILVER

Quality finish for reliable connections and signal transmission.

Terminal Position: DUAL

Dual terminal position for versatile mounting options and ease of connectivity.

Maximum Voltage Gain: 1000

High gain capability for amplifying weak signals with clarity.

Maximum Seated Height: 1.1 mm

Low profile design for space-saving and compact installations.

Width: 3 mm

Compact width for easy integration into electronic assemblies.

Nominal Bandwidth (3dB): 0.5 MHz

Sufficient bandwidth for processing high-frequency signals accurately.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable soldering and durability during assembly.

Peak Reflow Temperature °C: 260

High reflow temperature for secure solder joints and long-term reliability.

Length: 3 mm

Compact length for space-saving installations.

Temperature Grade: MILITARY

Designed to meet stringent military standards for performance and ruggedness.

Minimum Common Mode Reject Ratio: 90 dB

High rejection ratio for minimizing noise and interference in signal processing.

Technology: CMOS

CMOS technology offers low power consumption and high reliability.

Terminal Form: GULL WING

Gull wing terminals for secure mounting and reliable connections.

Amplifier Type: INSTRUMENTATION AMPLIFIER

Specifically designed for accurate and precise measurement applications.

Maximum Supply Current: 0.07 mA

Low power consumption for energy-efficient operation.

Packing Method: TR

TR packing for easy handling and storage.

Nominal Slow Rate: 0.4 V/us

Stable and controlled voltage gain for accurate signal amplification.

Terminal Pitch: 0.65 mm

Fine terminal pitch for compact layout and reliable connections.

Nominal Voltage Gain: 25

Optimal voltage gain for various measurement and amplification tasks.

Moisture Sensitivity Level (MSL): 2

Resistant to moisture damage for long-term reliability.

Technical Specifications

Instrumentation Amplifiers INA321E/250G4 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

500 kHz

Nominal Slew Rate:

0.4 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

500 µV

Peak Bias Current:

10 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Maximum Supply Current:

70 μA

Minimum Voltage Gain:

5

Nominal Voltage Gain:

25

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.01 %

Maximum Input Offset Current (IIO):

10 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7.5 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

INA321E/250G4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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