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INA310B3IDGKR

Texas Instruments

INA310B3IDGKR by Texas Instruments

Texas Instruments' INA310B3IDGKR is an Operational Amplifier with 250uV Max Input Offset Voltage, 30uA Max Average Bias Current, and 140dB Nominal CMRR. Ideal for applications requiring precise current sensing in a compact form factor.

Median Price

$2.850

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 6,918 parts In-Stock

1+ parts

$2.850

100+ parts

$1.750

1k+ parts

$1.560

10k+ parts

$1.510

6,918

$2.850

$1.750

$1.560

$1.510

DigiKey

USA . 2,037 parts In-Stock

1+ parts

$2.850

100+ parts

$1.750

1k+ parts

$1.551

10k+ parts

$1.472

2,037

$2.850

$1.750

$1.551

$1.472

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,501 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,501

-

-

-

-

Digiode

USA . 294 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

294

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,567 parts In-Stock

1+ parts

$0.410

100+ parts

-

1k+ parts

-

10k+ parts

-

1,567

$0.410

-

-

-

One Stop Electronics

USA . 832 parts In-Stock

1+ parts

$0.410

100+ parts

-

1k+ parts

-

10k+ parts

-

832

$0.410

-

-

-

Semicontronic

India . 269 parts In-Stock

1+ parts

$4.410

100+ parts

$4.300

1k+ parts

$4.278

10k+ parts

-

269

$4.410

$4.300

$4.278

-

AZTECH Wire

Italy . 564 parts In-Stock

1+ parts

$6.173

100+ parts

-

1k+ parts

-

10k+ parts

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564

$6.173

-

-

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Microchip USA

USA . 3,749 parts In-Stock

1+ parts

$8.586

100+ parts

-

1k+ parts

-

10k+ parts

-

3,749

$8.586

-

-

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Corphita

USA . 3,583 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,583

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Corohmni

South Africa . 307 parts In-Stock

1+ parts

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307

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Overview

Discover the unparalleled precision and reliability of the Texas Instruments INA310B3IDGKR Operational Amplifier. Crafted with top-quality materials and cutting-edge technology, this device offers unbeatable performance in a compact square package. Ideal for a wide range of applications, from industrial automation to automotive systems, this op amp delivers exceptional common mode rejection and low offset voltage for optimal accuracy. Experience the value and benefits of Texas Instruments' expertise with the high-quality, versatile INA310B3IDGKR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and reliability for the operational amplifier.

Maximum Input Offset Voltage: 250 uV

Low input offset voltage ensures accuracy in signal processing and minimizes errors.

Maximum Average Bias Current (IIB): 30 uA

Low bias current helps in reducing power consumption and improves efficiency.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space.

Nominal Common Mode Reject Ratio: 140 dB

High common mode rejection ratio ensures effective rejection of noise and interference.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V makes it compatible with a wide range of applications.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting external components for different circuit configurations.

Maximum Supply Voltage Limit: 22 V

High supply voltage limit allows for a wide range of power supply options.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures reliable performance in various environmental conditions.

Frequency Compensation: YES

Frequency compensation helps in stabilizing the amplifier's response at different frequencies.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in extreme cold conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel palladium gold finish provides good conductivity and corrosion resistance for the terminals.

Low-Offset: YES

Low offset voltage contributes to high precision and accuracy in signal processing.

Nominal Unity Gain Bandwidth: 1000 kHz

High unity gain bandwidth ensures efficient amplification of signals without distortion.

Minimum Common Mode Reject Ratio: 120 dB

Even the minimum common mode rejection ratio is high, ensuring good noise rejection capabilities.

Maximum Supply Current: 2.25 mA

Low supply current consumption helps in reducing power requirements for the operational amplifier.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides stable operation and good overall performance.

Packing Method: TR, 13 INCH

TR packing method and 13 inch size make it suitable for automated assembly processes and bulk packaging.

Nominal Slow Rate: 2.5 V/us

Low slow rate ensures smooth signal processing without signal distortion or artifacts.

Terminal Pitch: 0.65 mm

Narrow terminal pitch allows for high-density PCB layouts and reduces footprint.

Moisture Sensitivity Level (MSL): 2

MSL 2 indicates the operational amplifier can withstand moderate exposure to moisture during storage or operation.

Technical Specifications

Operational Amplifiers (Op Amps) INA310B3IDGKR attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Total Functions:

1

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

140 dB

Minimum Common Mode Rejection Ratio (CMRR ):

120 dB

Input Offset Voltage Limit:

250 uV

Nominal Slew Rate:

2.5 V/us

Peak Bias Current:

30 uA

Maximum Bias Current (IIB) @25 °C:

30 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

22 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

2.25 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel, 13 Inch

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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