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INA212CIRSWT

Texas Instruments

INA212CIRSWT by Texas Instruments

Texas Instruments' INA212CIRSWT is an Operational Amplifier with 35uV Max Input Offset Voltage, 140dB Nominal CMRR, and 4kHz Unity Gain Bandwidth. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and compact CHIP CARRIER package style.

Median Price

$0.168

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 195 parts In-Stock

1+ parts

$0.173

100+ parts

$0.162

1k+ parts

-

10k+ parts

-

195

$0.173

$0.162

-

-

Mouser Electronics

USA . 346 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.957

10k+ parts

$0.918

346

-

-

$0.957

$0.918

Verical

USA . 195 parts In-Stock

1+ parts

-

100+ parts

$0.162

1k+ parts

-

10k+ parts

-

195

-

$0.162

-

-

Chip1Stop

Japan . 195 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.162

10k+ parts

-

195

-

-

$0.162

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 711 parts In-Stock

1+ parts

$0.164

100+ parts

-

1k+ parts

-

10k+ parts

-

711

$0.164

-

-

-

Vyrian

USA . 8,838 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,838

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,294 parts In-Stock

1+ parts

$0.156

100+ parts

-

1k+ parts

-

10k+ parts

-

3,294

$0.156

-

-

-

Component Stockers USA

USA . 17,102 parts In-Stock

1+ parts

$0.160

100+ parts

$0.150

1k+ parts

$0.650

10k+ parts

$0.650

17,102

$0.160

$0.150

$0.650

$0.650

Parana Technologies

USA . 2,104 parts In-Stock

1+ parts

$5.129

100+ parts

-

1k+ parts

$5.719

10k+ parts

-

2,104

$5.129

-

$5.719

-

DigiPath Technology Company

USA . 2,362 parts In-Stock

1+ parts

$5.648

100+ parts

-

1k+ parts

-

10k+ parts

-

2,362

$5.648

-

-

-

IDEA Electronic Components Group

UK . 1,543 parts In-Stock

1+ parts

$5.763

100+ parts

-

1k+ parts

$5.187

10k+ parts

-

1,543

$5.763

-

$5.187

-

ChromeModa Solutions

Germany . 415 parts In-Stock

1+ parts

$5.763

100+ parts

$4.726

1k+ parts

-

10k+ parts

-

415

$5.763

$4.726

-

-

Microchip USA

USA . 1,971 parts In-Stock

1+ parts

$17.490

100+ parts

$17.380

1k+ parts

$17.330

10k+ parts

$17.270

1,971

$17.490

$17.380

$17.330

$17.270

Overview

Unlock precision performance with the Texas Instruments INA212CIRSWT operational amplifier. Crafted with quality materials and advanced technology, this chip carrier boasts a nominal common mode reject ratio of 140 dB and a nominal voltage gain of 1000, making it ideal for automotive applications and beyond. Experience reliable operation in a compact package, backed by Texas Instruments' reputation for excellence. Elevate your designs with the value and benefits that only the INA212CIRSWT can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability, making this product suitable for various applications.

Maximum Input Offset Voltage: 35 uV

Low input offset voltage helps in minimizing errors in amplification, making this product ideal for precision applications.

Maximum Average Bias Current (IIB): 35 uA

Low bias current results in reduced power consumption and better performance, making this product energy-efficient.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Nominal Common Mode Reject Ratio: 140 dB

High common mode rejection ratio ensures accurate signal processing by reducing interference from common mode signals.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage of 5V, making it compatible with a wide range of systems and circuits.

Maximum Supply Voltage Limit: 26 V

With a maximum supply voltage limit of 26V, this product offers robust protection against overvoltage conditions.

Minimum Operating Temperature: -40 °C

Wide operating temperature range from -40°C to 125°C allows for reliable performance in harsh environmental conditions.

Nominal Unity Gain Bandwidth: 4 kHz

The nominal unity gain bandwidth of 4 kHz indicates high frequency response, making this product suitable for audio and signal processing applications.

Nominal Voltage Gain: 1000

High voltage gain of 1000 ensures signal amplification with minimal distortion, making this product ideal for applications requiring high gain.

Technical Specifications

Operational Amplifiers (Op Amps) INA212CIRSWT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Operational Amplifiers

Performance Specifications

Nominal Unity Gain Bandwidth:

4 kHz

Maximum Common Mode Voltage:

26 V

Nominal Common Mode Rejection Ratio (CMRR ):

140 dB

Minimum Common Mode Rejection Ratio (CMRR ):

105 dB

Input Offset Voltage Limit:

35 uV

Nominal Voltage Gain:

1000

Nominal Slew Rate:

0.4 V/us

Peak Bias Current:

35 uA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

26 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Physical Characteristics

Length:

0.071 in (1.8 mm)

Width:

0.055 in (1.4 mm)

Maximum Seated Height:

0.022 in (0.55 mm)

Total Terminals:

10

Terminal Pitch:

0.016 in (0.4 mm)

Terminal Position:

Quad

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Standards

JESD-30 Code:

R-PQCC-N10

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Chip Carrier, Very Thin Profile

Trade Compliance

INA212CIRSWT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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