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INA207AIDGSRG4

Texas Instruments

INA207AIDGSRG4 by Texas Instruments

Texas Instruments' INA207AIDGSRG4 is a dual operational amplifier with 2500uV max input offset voltage and 16uA max average bias current. Ideal for automotive applications, it operates at -40 to 125 °C with a response time of 1300ns. The package style is small outline, thin profile, shrink pitch with Gull Wing terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,574 parts In-Stock

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Digiode

USA . 2,357 parts In-Stock

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Nova Conductors

Japan . 53 parts In-Stock

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Parana Technologies

USA . 2,137 parts In-Stock

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$1.793

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$2.353

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$1.793

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ChromeModa Solutions

Germany . 6,008 parts In-Stock

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$2.015

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$1.652

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$2.015

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IDEA Electronic Components Group

UK . 2,059 parts In-Stock

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$1.814

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One Stop Electronics

USA . 607 parts In-Stock

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$2.410

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Ampacity Inc.

Singapore . 488 parts In-Stock

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$5.410

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AZTECH Wire

Italy . 298 parts In-Stock

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$16.848

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Microchip USA

USA . 2,450 parts In-Stock

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Corphita

USA . 1,791 parts In-Stock

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Aranea Global

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DigiPath Technology Company

USA . 192 parts In-Stock

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$1.817

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Overview

Enhance your next project with the INA207AIDGSRG4 by Texas Instruments, a high-quality operational amplifier that offers exceptional performance and reliability. With Texas Instruments' reputation for excellence in manufacturing, you can trust that this product delivers outstanding results. Ideal for a wide range of applications, this op amp provides value and benefits through its precision and efficiency. Experience the advantages of the INA207AIDGSRG4 and elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for various applications

Maximum Input Offset Voltage: 2500 uV

Low input offset voltage ensures accurate signal processing

Maximum Average Bias Current (IIB): 16 uA

Low bias current for efficient performance and stability

Surface Mount: YES

Ease of installation and space-saving design

No. of Functions: 2

Dual functionality, versatile usage

Nominal Supply Voltage / Vsup (V): 12

Compatible with standard 12V power supply

Maximum Supply Voltage Limit: 18 V

Wide supply voltage range for flexibility in design

Maximum Operating Temperature: 125 °C

High operating temperature range for reliability in harsh environments

Output Type: OPEN-DRAIN

Open-drain output for easy interfacing with other components

Nominal Response Time: 1300 ns

Fast response time for real-time signal processing

Minimum Operating Temperature: -40 °C

Wide temperature range for operation in extreme conditions

Amplifier Type: COMPARATOR

Comparator functionality for accurate comparison of signals

Technical Specifications

Operational Amplifiers (Op Amps) INA207AIDGSRG4 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Power Supply:

12 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Performance Specifications

Maximum Common Mode Voltage:

80 V

Minimum Common Mode Rejection Ratio (CMRR ):

100 dB

Input Offset Voltage Limit:

2500 uV

Nominal Voltage Gain:

50

Peak Bias Current:

16 uA

Maximum Bias Current (IIB) @25 °C:

10 nA

Operational Characteristics

Nominal Supply Voltage:

12 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

2.8 mA

Nominal Response Time:

1.3 µs

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

10

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold Silver

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Output Type:

Open-Drain

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G10

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP10,.19,20

Trade Compliance

INA207AIDGSRG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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