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INA125UE4

Texas Instruments

INA125UE4 by Texas Instruments

INA125UE4 by Texas Instruments is an instrumentation amplifier with a max input offset voltage of 500uV and max supply current of 0.525mA. Ideal for industrial applications, it offers a nominal bandwidth of 0.15MHz and min common mode reject ratio of 78dB. With surface mount capability and compact design, it suits precision measurement systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,571 parts In-Stock

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Digiode

USA . 2,998 parts In-Stock

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Nova Conductors

Japan . 56 parts In-Stock

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56

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Distributors (Availability)

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Ampacity Inc.

Singapore . 958 parts In-Stock

1+ parts

$0.410

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958

$0.410

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One Stop Electronics

USA . 973 parts In-Stock

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$3.410

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973

$3.410

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Parana Technologies

USA . 705 parts In-Stock

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$4.417

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$410.192

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$3.975

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705

$4.417

$410.192

$3.975

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DigiPath Technology Company

USA . 1,860 parts In-Stock

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$4.864

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$4.864

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ChromeModa Solutions

Germany . 2,981 parts In-Stock

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$4.963

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$4.070

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$4.963

$4.070

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IDEA Electronic Components Group

UK . 1,811 parts In-Stock

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$4.963

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$4.467

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1,811

$4.963

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AZTECH Wire

Italy . 586 parts In-Stock

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$6.414

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Continental Prestige Electronics

USA . 6,053 parts In-Stock

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Argo Parts USA

USA . 4,772 parts In-Stock

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Corphita

USA . 4,578 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the Texas Instruments INA125UE4 instrumentation amplifier. Crafted with precision and expertise, this high-quality product offers unparalleled performance and reliability. Ideal for a variety of applications, this amplifier provides customers with superior value, benefits, and advantages. Experience enhanced efficiency and accuracy in your projects with the Texas Instruments INA125UE4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product suitable for various environments.

Maximum Input Offset Voltage: 500 uV

Low offset voltage ensures accurate signal processing and measurement.

Surface Mount: YES

Enables easy and efficient installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 15

Standard supply voltage for stable operation.

Maximum Operating Temperature: 85 °C

Allows for reliable performance in high-temperature conditions.

Minimum Voltage Gain: 4

Provides flexibility in amplification settings for different applications.

Nominal Bandwidth (3dB): 0.15 MHz

Offers good frequency response for accurate signal amplification.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications with varying temperature conditions.

Technical Specifications

Instrumentation Amplifiers INA125UE4 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Power Supply:

2.7/36/±1.3/±18 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

150 kHz

Minimum Common Mode Rejection Ratio (CMRR ):

78 dB

Input Offset Voltage Limit:

500 µV

Peak Bias Current:

50 nA

Maximum Supply Current:

525 μA

Minimum Voltage Gain:

4

Nominal Voltage Gain:

10

Maximum Voltage Gain:

10000

Maximum Non Linearity:

0.002 %

Maximum Input Offset Current (IIO):

5 pA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.39 in (9.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

16

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

3

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP16,.25

Trade Compliance

INA125UE4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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