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INA125TDA2

Texas Instruments

INA125TDA2 by Texas Instruments

INA125TDA2 by Texas Instruments is an instrumentation amplifier with max voltage gain of 10000 and bandwidth of 0.15 MHz. Ideal for precision applications, it offers low offset voltage of 250 uV and low bias current of 0.025 uA, making it suitable for sensitive measurements in medical devices or industrial equipment.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,437 parts In-Stock

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3,437

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Vyrian

USA . 3,016 parts In-Stock

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3,016

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Chip Stock

USA . 136 parts In-Stock

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136

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Distributors (Availability)

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Parana Technologies

USA . 1,279 parts In-Stock

1+ parts

$2.100

100+ parts

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$2.617

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1,279

$2.100

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$2.617

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DigiPath Technology Company

USA . 489 parts In-Stock

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$2.313

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$2.128

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489

$2.313

$2.128

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ChromeModa Solutions

Germany . 3,554 parts In-Stock

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$2.360

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$1.935

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3,554

$2.360

$1.935

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IDEA Electronic Components Group

UK . 1,770 parts In-Stock

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$2.360

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$2.124

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1,770

$2.360

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One Stop Electronics

USA . 1,500 parts In-Stock

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$7.410

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$7.410

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AZTECH Wire

Italy . 745 parts In-Stock

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$18.981

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745

$18.981

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Microchip USA

USA . 1,053 parts In-Stock

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$121.750

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$119.630

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$118.580

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$117.520

1,053

$121.750

$119.630

$118.580

$117.520

Corphita

USA . 3,802 parts In-Stock

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Overview

Discover the unparalleled performance and precision of the Texas Instruments INA125TDA2 instrumentation amplifier. With a maximum input offset voltage of 250 uV and maximum bias current of 0.025 uA, this top-of-the-line device offers unmatched accuracy and reliability for a wide range of applications. From industrial automation to medical electronics, the INA125TDA2 delivers exceptional results every time. Trust in Texas Instruments' reputation for quality and innovation, and experience the value and benefits that this advanced amplifier brings to your projects.

Feature Benefit Bullets

Maximum Input Offset Voltage: 250 uV

Low offset voltage ensures accurate and precise measurements, making this product ideal for sensitive instrumentation applications.

Maximum Average Bias Current (IIB): 0.025 uA

Low bias current minimizes errors in the measurements and ensures stability over time, making this product reliable for long-term use.

Surface Mount: YES

Surface mount capability makes the installation and integration of this product easier and more efficient in compact designs.

Package Shape: RECTANGULAR

Rectangular package shape allows for easier placement and mounting on PCBs, optimizing space utilization in the design.

No. of Terminals: 17

The higher number of terminals provide greater flexibility in circuit connections and configurations, enabling versatile usage in various applications.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers a smaller footprint and lower profile, suitable for applications where space constraints are a concern.

Maximum Non Linearity: 0.004 %

Low non-linearity ensures accurate signal amplification without distortion, making this product suitable for precision measurement applications.

Minimum Voltage Gain: 4

The minimum voltage gain of 4 provides a wide range of amplification options, catering to different signal levels and requirements.

Terminal Position: UPPER

Upper terminal position facilitates easier access and connection to other components in the circuit, enhancing usability and convenience during installation.

Maximum Voltage Gain: 10000

High maximum voltage gain capability allows for significant signal amplification, making this product suitable for applications requiring high gain levels.

Width: 1.9558 mm

Narrow width enables compact and space-efficient PCB layout designs, ideal for applications with limited board real estate.

Nominal Bandwidth (3dB): 0.15 MHz

The wide bandwidth ensures that the product can accurately amplify signals up to 0.15 MHz, suitable for a variety of frequency-dependent applications.

Length: 4.228 mm

Compact length allows for efficient placement and routing on the PCB, optimizing the overall size and layout of the circuit design.

Minimum Common Mode Reject Ratio: 107 dB

High common mode rejection ratio ensures reliable suppression of unwanted common-mode signals, providing clean and accurate output signals.

Terminal Form: NO LEAD

No lead terminal form simplifies the mounting and soldering process, making the product easy to handle and install in the circuit.

Amplifier Type: INSTRUMENTATION AMPLIFIER

Being an instrumentation amplifier, this product offers high accuracy, high input impedance, and low output impedance, making it ideal for precision measurement and sensor applications.

Packing Method: TUBE

Tube packing method ensures secure transportation and storage of the product, protecting it from damage and ensuring product integrity during handling and shipping.

Technical Specifications

Instrumentation Amplifiers INA125TDA2 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

150 kHz

Minimum Common Mode Rejection Ratio (CMRR ):

107 dB

Input Offset Voltage Limit:

250 µV

Peak Bias Current:

25 nA

Maximum Bias Current (IIB) @25 °C:

25 nA

Minimum Voltage Gain:

4

Maximum Voltage Gain:

10000

Maximum Non Linearity:

0.004 %

Physical Characteristics

Length:

0.166 in (4.228 mm)

Width:

0.077 in (1.9558 mm)

Total Terminals:

17

Terminal Position:

Upper

Terminal Form:

Surface Mount:

Yes

Standards

JESD-30 Code:

R-XUUC-N17

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIE

Package Shape:

Package Style:

Uncased Chip

Trade Compliance

INA125TDA2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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