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INA111BPG4

Texas Instruments

INA111BPG4 by Texas Instruments

INA111BPG4 by Texas Instruments is an instrumentation amplifier with 2 MHz bandwidth, 10000 voltage gain, and 80 dB CMRR. It operates in industrial temperature range and has a max supply current of 4.5 mA. Ideal for precision signal conditioning in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,266 parts In-Stock

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8,266

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Digiode

USA . 4,413 parts In-Stock

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4,413

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,215 parts In-Stock

1+ parts

$0.410

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1,215

$0.410

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Parana Technologies

USA . 2,034 parts In-Stock

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$0.851

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$1.805

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2,034

$0.851

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$1.805

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DigiPath Technology Company

USA . 384 parts In-Stock

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$0.937

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384

$0.937

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ChromeModa Solutions

Germany . 2,502 parts In-Stock

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$0.956

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$0.784

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2,502

$0.956

$0.784

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IDEA Electronic Components Group

UK . 1,739 parts In-Stock

1+ parts

$0.956

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$0.860

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1,739

$0.956

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$0.860

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Semicontronic

India . 1,380 parts In-Stock

1+ parts

$1.410

100+ parts

$1.375

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$1.368

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1,380

$1.410

$1.375

$1.368

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Ampacity Inc.

Singapore . 1,620 parts In-Stock

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$2.410

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$2.410

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Corohmni

South Africa . 445 parts In-Stock

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$7.316

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445

$7.316

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AZTECH Wire

Italy . 563 parts In-Stock

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$15.453

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563

$15.453

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Continental Prestige Electronics

USA . 1,795 parts In-Stock

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Corphita

USA . 1,049 parts In-Stock

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Argo Parts USA

USA . 518 parts In-Stock

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518

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Elevate your next project with the Texas Instruments INA111BPG4 Instrumentation Amplifier. Known for their top-quality manufacturing, Texas Instruments delivers superior performance and reliability in every product. The INA111BPG4 is a versatile amplifier suitable for a wide range of applications, providing unmatched precision and accuracy. With a broad nominal bandwidth and high voltage gain, this amplifier offers customers exceptional value and benefits, making it the perfect choice for demanding projects where quality matters most. Trust Texas Instruments to take your designs to the next level with the powerful and efficient INA111BPG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Offers durability and resistance to environmental factors, making the product reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 15

Suitable for a wide range of applications with a stable supply voltage.

Maximum Input Offset Voltage: 2500 uV

Provides high precision and accuracy in signal amplification.

Maximum Non Linearity: 0.02 %

Ensures minimal distortion and maintains signal integrity.

Nominal Bandwidth (3dB): 2 MHz

Allows for amplification of signals within a wide frequency range.

Maximum Voltage Gain: 10000

Enables significant amplification of input signals with high fidelity.

Temperature Grade: INDUSTRIAL

Suitable for use in industrial environments with wide temperature variations.

Technical Specifications

Instrumentation Amplifiers INA111BPG4 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Power Supply:

±15 V

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

2 MHz

Nominal Slew Rate:

17 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

2.5 mV

Peak Bias Current:

20 pA

Maximum Supply Current:

4.5 mA

Minimum Voltage Gain:

1

Nominal Voltage Gain:

10

Maximum Voltage Gain:

10000

Maximum Non Linearity:

0.02 %

Maximum Input Offset Current (IIO):

10 pA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

18 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Length:

0.386 in (9.81 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In-Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

INA111BPG4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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