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DRV5057A2QDBZT

Texas Instruments

DRV5057A2QDBZT by Texas Instruments

Texas Instruments' DRV5057A2QDBZT is a Hall effect magnetic field sensor with 3-3.63V supply voltage range, -40 to 125°C operating temperature, and 0-20mA analog current output. Ideal for applications requiring precise magnetic field detection in compact spaces due to its small rectangular package design and surface mounting feature.

Median Price

$1.760

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 153 parts In-Stock

1+ parts

$2.120

100+ parts

$1.552

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153

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$1.552

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Mouser Electronics

USA . 175 parts In-Stock

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-

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$1.400

10k+ parts

$1.350

175

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$1.400

$1.350

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,569 parts In-Stock

1+ parts

$2.527

100+ parts

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1,569

$2.527

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Vyrian

USA . 7,499 parts In-Stock

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7,499

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 297 parts In-Stock

1+ parts

$1.190

100+ parts

$1.160

1k+ parts

$1.154

10k+ parts

-

297

$1.190

$1.160

$1.154

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Ampacity Inc.

Singapore . 20 parts In-Stock

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$1.190

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20

$1.190

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Corohmni

South Africa . 362 parts In-Stock

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$1.400

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362

$1.400

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Parana Technologies

USA . 852 parts In-Stock

1+ parts

$2.355

100+ parts

$218.692

1k+ parts

$2.119

10k+ parts

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852

$2.355

$218.692

$2.119

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Corphita

USA . 3,356 parts In-Stock

1+ parts

$2.394

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3,356

$2.394

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DigiPath Technology Company

USA . 1,509 parts In-Stock

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$2.593

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1,509

$2.593

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ChromeModa Solutions

Germany . 6,041 parts In-Stock

1+ parts

$2.646

100+ parts

$2.170

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6,041

$2.646

$2.170

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IDEA Electronic Components Group

UK . 536 parts In-Stock

1+ parts

$2.646

100+ parts

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$2.381

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536

$2.646

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$2.381

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Native Components

USA . 910 parts In-Stock

1+ parts

$80.680

100+ parts

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10k+ parts

$77.453

910

$80.680

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$77.453

Northwest PG Solutions

USA . 1,067 parts In-Stock

1+ parts

$88.748

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1,067

$88.748

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Overview

Enhance your magnetic field sensing applications with the DRV5057A2QDBZT by Texas Instruments. With a reputation for high-quality products, Texas Instruments delivers reliable solutions for various industries. The DRV5057A2QDBZT offers precise measurements and easy integration, making it ideal for a wide range of applications. Experience the value and benefits of this sensor, from its compact design to its accurate output range. Trust Texas Instruments to provide you with the best in magnetic field sensors for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the sensor, making it suitable for various environments.

Maximum Supply Voltage: 3.63 V

A higher supply voltage allows for greater sensitivity and accuracy in measuring magnetic fields.

Body Width: 1.3 inch

The compact size of the sensor makes it easy to integrate into different systems and applications.

Sensors or Transducers Type: MAGNETIC FIELD SENSOR,HALL EFFECT

Being a Hall Effect sensor, it provides accurate and reliable measurement of magnetic fields.

Body Height: 1.12 mm

The slim profile of the sensor allows for easy installation in tight spaces.

Package Shape or Style: RECTANGULAR

The rectangular shape makes it easy to mount the sensor securely in place.

Minimum Supply Voltage: 3 V

A lower minimum supply voltage ensures efficient power consumption.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows the sensor to be used in a variety of industrial applications.

Output Range: 0-20mA

The wide output range allows for versatile use in different systems and applications.

Output Type: ANALOG CURRENT

Analog output provides continuous and precise measurement of magnetic fields.

Minimum Operating Temperature: -40 °C

The low operating temperature range ensures the sensor can function in extreme cold conditions.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides corrosion resistance and enhances the sensor's longevity.

Maximum Operating Current: 10 mA

The high operating current allows for efficient performance of the sensor in measuring magnetic fields.

Housing: PLASTIC

The plastic housing offers lightweight and durable protection for the sensor.

Maximum Output Current: 20 A

High maximum output current enables the sensor to handle a wide range of magnetic field strengths.

Body Length/Diameter: 2.92 mm

The small body size of the sensor makes it suitable for compact devices and applications.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections for the sensor.

Mounting Feature: SURFACE MOUNT

Surface mount capability allows for easy installation and integration of the sensor onto circuit boards.

Technical Specifications

Magnetic Field Sensors DRV5057A2QDBZT attributes and parameters. Explore more Magnetic Field Sensors devices from Texas Instruments

Specs

Additional Features:

IT ALSO HAS POWER SUPPLY VOLTAGE 4.5 TO 5.5V; SENSITIVITY HAS 1 PERCENT D/MT

Body Width:

1.3 inch

Body Height:

1.12 mm

Body Length/Diameter:

2.92 mm

Housing:

PLASTIC

JESD-609 Code:

e3

Mounting Feature:

Maximum Operating Current:

10 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

20 A

Output Range:

Output Type:

Package Body Material:

PLASTIC/EPOXY

Package Shape or Style:

Sensors or Transducers Type:

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

3 V

Terminal Finish:

Matte Tin (Sn)

Termination Type:

SOLDER

Trade Compliance

DRV5057A2QDBZT Sensors & Transducers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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