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DRV5055A2QDBZT

Texas Instruments

DRV5055A2QDBZT by Texas Instruments

Texas Instruments' DRV5055A2QDBZT is a magnetic field sensor with 3-3.63V supply voltage range, -40 to 125°C operating temperature, and -1-1mA analog current output. Ideal for applications requiring Hall effect sensors in compact surface-mount packages.

Median Price

$1.610

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,821 parts In-Stock

1+ parts

$2.160

100+ parts

$1.357

1k+ parts

-

10k+ parts

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6,821

$2.160

$1.357

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Mouser Electronics

USA . 4,365 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.060

10k+ parts

$0.931

4,365

-

-

$1.060

$0.931

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$1.060

100+ parts

-

1k+ parts

-

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500

$1.060

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-

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Digiode

USA . 440 parts In-Stock

1+ parts

$2.166

100+ parts

-

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440

$2.166

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Vyrian

USA . 5,878 parts In-Stock

1+ parts

-

100+ parts

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5,878

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 27 parts In-Stock

1+ parts

$0.854

100+ parts

-

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27

$0.854

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-

-

Ampacity Inc.

Singapore . 5,801 parts In-Stock

1+ parts

$0.900

100+ parts

-

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5,801

$0.900

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Semicontronic

India . 5,785 parts In-Stock

1+ parts

$0.900

100+ parts

$0.878

1k+ parts

$0.873

10k+ parts

-

5,785

$0.900

$0.878

$0.873

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Continental Prestige Electronics

USA . 4,905 parts In-Stock

1+ parts

$1.060

100+ parts

-

1k+ parts

-

10k+ parts

$1.039

4,905

$1.060

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-

$1.039

Argo Parts USA

USA . 1,283 parts In-Stock

1+ parts

$1.060

100+ parts

-

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1,283

$1.060

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Netroflash

USA . 500 parts In-Stock

1+ parts

$1.060

100+ parts

-

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500

$1.060

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-

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$1.230

100+ parts

$1.131

1k+ parts

$1.060

10k+ parts

-

270

$1.230

$1.131

$1.060

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Corphita

USA . 340 parts In-Stock

1+ parts

$2.052

100+ parts

-

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340

$2.052

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Parana Technologies

USA . 1,458 parts In-Stock

1+ parts

$2.998

100+ parts

-

1k+ parts

$3.502

10k+ parts

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1,458

$2.998

-

$3.502

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DigiPath Technology Company

USA . 412 parts In-Stock

1+ parts

$3.301

100+ parts

$3.037

1k+ parts

-

10k+ parts

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412

$3.301

$3.037

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ChromeModa Solutions

Germany . 4,414 parts In-Stock

1+ parts

$3.368

100+ parts

$2.762

1k+ parts

-

10k+ parts

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4,414

$3.368

$2.762

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IDEA Electronic Components Group

UK . 1,811 parts In-Stock

1+ parts

$3.368

100+ parts

-

1k+ parts

$3.031

10k+ parts

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1,811

$3.368

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$3.031

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Lixinc

USA . 3,241 parts In-Stock

1+ parts

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3,241

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Authorized Procurement Solutions

USA . 200 parts In-Stock

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200

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Overview

Unlock a world of possibilities with the DRV5055A2QDBZT by Texas Instruments, a top-of-the-line Magnetic Field Sensor designed to revolutionize your projects. Crafted with precision and expertise by Texas Instruments, this sensor offers unparalleled quality and reliability. Perfect for a wide range of applications, this sensor provides accurate measurements while ensuring ease of use. Experience the value and benefits of this sensor as it delivers exceptional performance and efficiency. Trust Texas Instruments to provide you with the tools you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the sensor lightweight and durable, suitable for various applications.

Maximum Supply Voltage: 3.63 V

With a high maximum supply voltage, this sensor can handle a wide range of input voltages, providing flexibility in different circuit designs.

Body Width: 1.3 inch

The compact body width of 1.3 inch allows for easy integration and placement of the sensor in tight spaces.

Sensors or Transducers Type: MAGNETIC FIELD SENSOR, HALL EFFECT

Being a Hall effect magnetic field sensor, this product offers high sensitivity and accuracy in detecting magnetic fields, making it reliable for precise measurements.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature of -40 °C, this sensor can withstand harsh environmental conditions, ensuring reliable performance in extreme cold temperatures.

Output Range: -1-1mA

The output range of -1-1mA provides a linear response to the detected magnetic field, allowing for easy interpretation of the sensor readings.

Output Type: ANALOG CURRENT

The analog current output type simplifies interface with other analog components, making it easy to integrate this sensor into existing systems.

Maximum Output Current: 1 A

With a high maximum output current of 1 A, this sensor can drive external loads or circuits without the need for additional amplification.

Input Mode: BIPOLAR

The bipolar input mode allows the sensor to detect both positive and negative magnetic fields, increasing its versatility in different applications.

Technical Specifications

Magnetic Field Sensors DRV5055A2QDBZT attributes and parameters. Explore more Magnetic Field Sensors devices from Texas Instruments

Specs

Additional Features:

IT HAVE SENSITIVITY OF PLUS OR MINUS 30 MV/MT; IT ALSO OPERATES AT 4.5 TO 5.5 V SUPPLY VOLTAGE

Body Width:

1.3 inch

Body Height:

1.12 mm

Body Length/Diameter:

2.92 mm

Housing:

PLASTIC

Input Mode:

BIPOLAR

JESD-609 Code:

e3

Mounting Feature:

Maximum Operating Current:

10 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

1 A

Output Polarity:

INVERTING

Output Range:

Output Type:

Package Body Material:

PLASTIC/EPOXY

Package Shape or Style:

Sensors or Transducers Type:

Maximum Supply Voltage:

3.63 V

Minimum Supply Voltage:

3 V

Terminal Finish:

Matte Tin (Sn)

Termination Type:

SOLDER

Trade Compliance

DRV5055A2QDBZT Sensors & Transducers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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