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DRV5013AGEDBZTQ1

Texas Instruments

DRV5013AGEDBZTQ1 by Texas Instruments

DRV5013AGEDBZTQ1 by Texas Instruments is a magnetic field sensor with hysteresis of 12 mT, operating temperature range from -40 to 150°C, and output current up to 30 A. It is ideal for automotive applications requiring precise current output in a compact rectangular package.

Median Price

$1.110

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 812 parts In-Stock

1+ parts

$1.110

100+ parts

$0.795

1k+ parts

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812

$1.110

$0.795

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 617 parts In-Stock

1+ parts

$1.235

100+ parts

-

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-

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617

$1.235

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Vyrian

USA . 6,559 parts In-Stock

1+ parts

-

100+ parts

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6,559

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 651 parts In-Stock

1+ parts

$1.100

100+ parts

-

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651

$1.100

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Semicontronic

India . 511 parts In-Stock

1+ parts

$1.100

100+ parts

$1.072

1k+ parts

$1.067

10k+ parts

-

511

$1.100

$1.072

$1.067

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Corphita

USA . 3,326 parts In-Stock

1+ parts

$1.170

100+ parts

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3,326

$1.170

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Corohmni

South Africa . 309 parts In-Stock

1+ parts

$1.300

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309

$1.300

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Native Components

USA . 746 parts In-Stock

1+ parts

$1.573

100+ parts

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746

$1.573

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Northwest PG Solutions

USA . 2,326 parts In-Stock

1+ parts

$1.731

100+ parts

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2,326

$1.731

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Parana Technologies

USA . 1,307 parts In-Stock

1+ parts

$2.720

100+ parts

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1k+ parts

$3.202

10k+ parts

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1,307

$2.720

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$3.202

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DigiPath Technology Company

USA . 2,180 parts In-Stock

1+ parts

$2.995

100+ parts

$2.755

1k+ parts

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10k+ parts

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2,180

$2.995

$2.755

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IDEA Electronic Components Group

UK . 2,219 parts In-Stock

1+ parts

$3.056

100+ parts

-

1k+ parts

$2.750

10k+ parts

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2,219

$3.056

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$2.750

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ChromeModa Solutions

Germany . 212 parts In-Stock

1+ parts

$3.056

100+ parts

$2.506

1k+ parts

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212

$3.056

$2.506

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Overview

Unlock the power of magnetic field sensing with the DRV5013AGEDBZTQ1 by Texas Instruments. This high-quality sensor offers unparalleled precision and reliability in a compact, easy-to-mount package. Ideal for a wide range of applications, from automotive to industrial automation, this sensor provides precise current output with a wide operating temperature range. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations. Experience the benefits of superior performance and unmatched value with the DRV5013AGEDBZTQ1. Elevate your projects with Texas Instruments today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for housing the sensor.

Maximum Supply Voltage: 38 V

Can handle higher voltage operations, providing flexibility in application.

Screening Level: AEC-Q100

Meets automotive industry standards for reliability and quality assurance.

Hysteresis: 12 mT

Provides accurate and consistent magnetic field detection with minimal error.

Body Width: 1.3 inch

Compact size for easy integration into various devices or systems.

Sensors or Transducers Type: MAGNETIC FIELD SENSOR,HALL EFFECT

Utilizes Hall Effect technology for precise sensing of magnetic fields.

Body Height: 1.12 mm

Low profile design for space-constrained applications.

Package Shape or Style: RECTANGULAR

Standard shape for easy mounting and installation.

Minimum Supply Voltage: 2.7 V

Suitable for low power applications or battery-operated devices.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments without performance degradation.

Output Range: 0-30mA

Provides a wide range of output current for different sensing needs.

Output Type: CURRENT OUTPUT

Delivers a current signal for easy interfacing with other electronics.

Minimum Operating Temperature: -40 °C

Works reliably in cold temperature conditions as well.

Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Corrosion-resistant finish for long-lasting performance.

Output (V): OPEN-DRAIN

Open-drain output configuration for easy connection to microcontrollers or logic circuits.

Maximum Operating Current: 3.5 mA

Low power consumption for energy-efficient operation.

Minimum Range Of Magnetic Field: -9 mT

Capable of detecting weak magnetic fields for versatile applications.

Maximum Output Current: 30 A

High output current capability for robust signal transmission.

Input Mode: BIPOLAR(LATCHED)

Latched input mode for retaining the sensor state until reset.

Maximum Magnetic Field Range: 9 mT

Can detect a wide range of magnetic field strengths for diverse sensing requirements.

Body Length/Diameter: 2.92 mm

Compact form factor for easy integration and space-saving installation.

Termination Type: SOLDER

Solder termination for secure and reliable electrical connections.

Output Interface Type: 2-WIRE INTERFACE

Simple two-wire interface for easy communication with external devices.

Mounting Feature: SURFACE MOUNT

Surface mount design for convenient and secure mounting on PCBs or surfaces.

Technical Specifications

Magnetic Field Sensors DRV5013AGEDBZTQ1 attributes and parameters. Explore more Magnetic Field Sensors devices from Texas Instruments

Specs

Additional Features:

AEC-Q100, SHORT CIRCUIT PROTECTION, REVERSE SUPPLY PROTECTION

Body Width:

1.3 inch

Body Height:

1.12 mm

Body Length/Diameter:

2.92 mm

Hysteresis:

12 mT

Input Mode:

BIPOLAR(LATCHED)

JESD-609 Code:

e4

Maximum Magnetic Field Range:

9 mT

Minimum Range Of Magnetic Field:

-9 mT

Mounting Feature:

Maximum Operating Current:

3.5 mA

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

OPEN-DRAIN

Maximum Output Current:

30 A

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Body Material:

PLASTIC/EPOXY

Package Shape or Style:

Screening Level:

AEC-Q100

Sensors or Transducers Type:

Maximum Supply Voltage:

38 V

Minimum Supply Voltage:

2.7 V

Terminal Finish:

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Termination Type:

SOLDER

Trade Compliance

DRV5013AGEDBZTQ1 Sensors & Transducers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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