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CD74HC4316MG4

Texas Instruments

CD74HC4316MG4 by Texas Instruments

CD74HC4316MG4 by Texas Instruments is a CMOS SPST multiplexer with 4 channels, 480 ohm Ron, and 200 kHz bandwidth. It operates in a temperature range of -55 to 125 °C and is suitable for military-grade applications requiring low power consumption and high isolation levels.

Median Price

$1.240

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 989 parts In-Stock

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$1.240

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$0.569

10k+ parts

$0.486

989

$1.240

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$0.569

$0.486

Distributors (In-Stock)

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Digiode

USA . 4,103 parts In-Stock

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$1.178

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Vyrian

USA . 5,101 parts In-Stock

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Euro-Tech

UK . 2,660 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 888 parts In-Stock

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$0.112

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$0.107

888

$0.112

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$0.107

Northwest PG Solutions

USA . 926 parts In-Stock

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$0.123

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$0.108

926

$0.123

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$0.108

Corphita

USA . 2,867 parts In-Stock

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$1.116

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Parana Technologies

USA . 1,829 parts In-Stock

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$2.673

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$3.158

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1,829

$2.673

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DigiPath Technology Company

USA . 1,978 parts In-Stock

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$2.943

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ChromeModa Solutions

Germany . 3,427 parts In-Stock

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$3.003

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$2.462

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$3.003

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IDEA Electronic Components Group

UK . 1,803 parts In-Stock

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$3.003

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$2.703

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Microchip USA

USA . 10,308 parts In-Stock

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Perfect Parts

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Overview

Enhance your electronic projects with the CD74HC4316MG4 by Texas Instruments! Crafted with precision and reliability, this multiplexer switch offers seamless functionality for a wide range of applications. From audio systems to industrial automation, this versatile component delivers exceptional performance and efficiency. Trust in Texas Instruments' reputation for high-quality products and experience the value that the CD74HC4316MG4 brings to your projects. Upgrade your designs today with this top-of-the-line solution!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the multiplexer/switch.

No. of Functions: 4

Allows for multiple inputs to be switched or connected, providing versatility in applications.

Nominal Supply Voltage (Vsup): 4.5 V

Compatible with common voltage levels, making it easy to integrate into existing systems.

Maximum Operating Temperature: 125 °C

Can operate in high temperature environments without issues, suitable for a variety of applications.

Technology: CMOS

Utilizes CMOS technology for efficient power consumption and high performance.

Nominal Bandwidth: 200 kHz

Provides ample bandwidth for switching signals, ensuring smooth operation.

Technical Specifications

Multiplexers & Switches CD74HC4316MG4 attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Additional Features:

ALSO OPERATES WITH 2V TO 10V (VCC-VEE) SUPPLY

Other IC type:

Nominal Bandwidth:

200 kHz

Maximum Input Voltage:

6 V

Minimum Input Voltage:

0 V

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

1

Maximum Negative Supply Voltage (Vsup):

-6 V

Minimum Negative Supply Voltage (Vsup):

0 V

Nominal Negative Supply Voltage (Vsup):

-4.5 V

Normal Position (V):

NO

No. of Channels:

4

No. of Functions:

4

No. of Terminals:

16

Nominal Off-state Isolation:

62 dB

Nominal On-state Resistance Match:

5 ohm

Maximum On-state Resistance (Ron):

480 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6,GND/-6

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

.08 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

4.5 V

Surface Mount:

YES

Maximum Switch-off Time:

34 ns

Maximum Switch-on Time:

34 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3.9 mm

Trade Compliance

CD74HC4316MG4 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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