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CD4067BPWRG4

Texas Instruments

CD4067BPWRG4 by Texas Instruments

CD4067BPWRG4 by Texas Instruments is a CMOS multiplexer with 16 channels, 1050 ohm max resistance, and 0.025 A signal current. It operates b/w -55 to 125 °C and has a MILITARY temperature grade. Ideal for applications requiring precise signal routing in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,944 parts In-Stock

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Digiode

USA . 987 parts In-Stock

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Nova Conductors

Japan . 67 parts In-Stock

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Ampacity Inc.

Singapore . 631 parts In-Stock

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$2.500

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One Stop Electronics

USA . 971 parts In-Stock

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$4.500

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AZTECH Wire

Italy . 785 parts In-Stock

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Parana Technologies

USA . 258 parts In-Stock

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$6.004

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$6.780

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DigiPath Technology Company

USA . 1,586 parts In-Stock

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$6.611

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ChromeModa Solutions

Germany . 5,411 parts In-Stock

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$5.532

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IDEA Electronic Components Group

UK . 2,218 parts In-Stock

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$6.071

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Continental Prestige Electronics

USA . 6,704 parts In-Stock

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Corphita

USA . 3,864 parts In-Stock

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Argo Parts USA

USA . 484 parts In-Stock

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Microchip USA

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Bastille Electronics

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Overview

Experience superior quality and reliability with the CD4067BPWRG4 by Texas Instruments, a leading manufacturer in the industry. This versatile multiplexer offers unparalleled value through its wide range of applications in various electronic circuits. Whether you're designing automation systems or communication equipment, this product provides seamless switching capabilities and ensures optimal performance. Trust Texas Instruments to deliver innovative solutions that meet your needs and exceed your expectations. Choose the CD4067BPWRG4 for exceptional results in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for a variety of applications.

Surface Mount: YES

Easy to install and saves space on the circuit board.

Power Supplies (V): 5/15

Provides flexibility in power options for different requirements.

No. of Channels: 16

Multiple channels allow for managing and switching multiple signals efficiently.

Technology: CMOS

Utilizes CMOS technology which offers low power consumption and high noise immunity.

Maximum On-state Resistance (Ron): 1050 ohm

Efficient signal transmission with low resistance.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments without compromising performance.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments without issues.

Technical Specifications

Multiplexers & Switches CD4067BPWRG4 attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G24

Length:

7.8 mm

No. of Channels:

16

No. of Functions:

1

No. of Terminals:

24

Nominal On-state Resistance Match:

15 ohm

Maximum On-state Resistance (Ron):

1050 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP24,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5/15

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Signal Current:

.025 A

Sub-Category:

Multiplexer or Switches

Maximum Supply Current (Isup):

3 mA

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Maximum Switch-off Time:

440 ns

Maximum Switch-on Time:

650 ns

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

4.4 mm

Trade Compliance

CD4067BPWRG4 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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