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BU500

Texas Instruments

BU500 by Texas Instruments

The Texas Instruments BU500 is an NPN transistor with a max power dissipation of 75W and max collector current of 6A. With a min DC current gain of 3, it operates up to 140°C, ideal for various electronic applications requiring high power handling and amplification.

Median Price

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Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Digiode

USA . 4,029 parts In-Stock

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4,029

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Vyrian

USA . 3,517 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,915 parts In-Stock

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Holdelec - ElecDif-Pro

France . 371 parts In-Stock

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371

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ECAB

Sweden . 158 parts In-Stock

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158

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LIBRA Elektronik GmbH

Germany . 68 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 33 parts In-Stock

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Huijzer Components

Netherlands . 16 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 15 parts In-Stock

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Speed Components Ltd

Israel . 10 parts In-Stock

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GES GmbH

Germany . 4 parts In-Stock

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Native Components

USA . 1,201 parts In-Stock

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$0.160

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$0.154

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$0.160

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Parana Technologies

USA . 1,946 parts In-Stock

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$1.188

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$1.990

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$1.188

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DigiPath Technology Company

USA . 1,151 parts In-Stock

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$1.308

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$1.204

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$1.308

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ChromeModa Solutions

Germany . 5,706 parts In-Stock

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$1.335

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$1.095

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$1.335

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IDEA Electronic Components Group

UK . 2,061 parts In-Stock

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$1.335

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$1.202

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AZTECH Wire

Italy . 439 parts In-Stock

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$15.511

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439

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One Stop Electronics

USA . 1,255 parts In-Stock

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$30.050

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Northwest PG Solutions

USA . 2,286 parts In-Stock

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Corphita

USA . 1,617 parts In-Stock

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Assy Fe

Spain . 180 parts In-Stock

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Overview

Unlock the power of innovation with the Texas Instruments BU500 transistor. Manufactured by a trusted industry leader, this NPN transistor offers high performance and reliability in a variety of applications. With a maximum power dissipation of 75W and a maximum collector current of 6A, the BU500 is perfect for enhancing the efficiency and functionality of your electronic projects. Experience the difference that quality components make with the BU500 from Texas Instruments.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications due to their low noise and high efficiency characteristics.

Configuration: SINGLE

Single configuration transistors are more cost-effective and easier to implement in circuits compared to multiple configurations.

Maximum Power Dissipation (Abs): 75 W

With a high maximum power dissipation rating, this transistor can handle relatively high power levels without being damaged, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 3

A higher minimum DC current gain ensures better amplification performance and signal integrity in the circuit.

Maximum Operating Temperature: 140 °C

The ability to operate at high temperatures allows this transistor to be used in a wide range of environments and applications without the risk of overheating.

Maximum Collector Current (IC): 6 A

With a high maximum collector current rating, this transistor can handle relatively high currents, making it suitable for power applications and high current circuits.

Technical Specifications

Other Function Transistors BU500 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

6 A

Configuration:

Minimum DC Current Gain (hFE):

3

No. of Elements:

1

Maximum Operating Temperature:

140 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

BU500 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4940-17-047-4896, 4940170474896, 5961-01-087-3341, 5961010873341

NIIN

170474896, 010873341

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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