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BSS19

Texas Instruments

BSS19 by Texas Instruments

The Texas Instruments BSS19 is an NPN transistor with a max power dissipation of 0.225W and a min DC current gain of 30. It operates at temperatures up to 150°C, making it suitable for applications requiring a collector current of up to 0.05A and a transition frequency of 50MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,707 parts In-Stock

1+ parts

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6,707

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Digiode

USA . 4,993 parts In-Stock

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4,993

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 164 parts In-Stock

1+ parts

$0.633

100+ parts

-

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164

$0.633

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Northwest PG Solutions

USA . 276 parts In-Stock

1+ parts

$0.696

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-

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276

$0.696

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Parana Technologies

USA . 2,258 parts In-Stock

1+ parts

$1.750

100+ parts

-

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$2.324

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2,258

$1.750

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$2.324

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DigiPath Technology Company

USA . 1,793 parts In-Stock

1+ parts

$1.927

100+ parts

$1.773

1k+ parts

-

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1,793

$1.927

$1.773

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ChromeModa Solutions

Germany . 1,081 parts In-Stock

1+ parts

$1.966

100+ parts

$1.612

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-

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1,081

$1.966

$1.612

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IDEA Electronic Components Group

UK . 627 parts In-Stock

1+ parts

$1.966

100+ parts

-

1k+ parts

$1.769

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627

$1.966

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$1.769

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AZTECH Wire

Italy . 764 parts In-Stock

1+ parts

$5.396

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764

$5.396

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One Stop Electronics

USA . 387 parts In-Stock

1+ parts

$13.050

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387

$13.050

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Semicontronic

India . 783 parts In-Stock

1+ parts

$26.050

100+ parts

$25.399

1k+ parts

$25.268

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783

$26.050

$25.399

$25.268

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Ampacity Inc.

Singapore . 1,303 parts In-Stock

1+ parts

$42.050

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1,303

$42.050

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Corphita

USA . 2,700 parts In-Stock

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2,700

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Corohmni

South Africa . 175 parts In-Stock

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175

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Overview

Experience superior performance and reliability with the BSS19 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-quality products that exceed expectations. The BSS19, belonging to the category of Other Function Transistors, offers unmatched value and benefits for various applications. With its NPN polarity and single configuration, this transistor delivers power efficiently and effectively. Trust Texas Instruments for cutting-edge technology that delivers exceptional results every time. Upgrade your electronics with the BSS19 and experience the difference today!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in low power amplification and switching circuits, making this product suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures easy integration into various electronic devices.

Maximum Power Dissipation (Abs): 0.225 W

With a maximum power dissipation of 0.225 W, this transistor can handle moderate power levels without thermal issues.

Minimum DC Current Gain (hFE): 30

The minimum DC current gain of 30 ensures reliable amplification of input signals, enhancing the performance of the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the transistor to withstand elevated temperatures, increasing its durability.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05 A, this transistor can handle moderate current levels, suitable for various applications.

Nominal Transition Frequency (fT): 50 MHz

The nominal transition frequency of 50 MHz indicates the speed at which the transistor can switch between on and off states, making it ideal for high-frequency applications.

Technical Specifications

Other Function Transistors BSS19 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

30

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BSS19 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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