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BQ24316DSGTG4

Texas Instruments

BQ24316DSGTG4 by Texas Instruments

BQ24316DSGTG4 by Texas Instruments is a Power Management IC with 8 terminals, operating voltage range of 3.3V to 26V, and adjustable threshold at +2.7V. It is designed for industrial applications, featuring a small outline package with very thin profile suitable for surface mount assembly. With a max operating temperature of 85°C and low supply current of 0.6 mA, it offers reliable power supply support in various electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,063 parts In-Stock

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Digiode

USA . 4,189 parts In-Stock

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EMSNET

USA . 220 parts In-Stock

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220

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One Stop Electronics

USA . 535 parts In-Stock

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$1.500

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535

$1.500

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Parana Technologies

USA . 1,580 parts In-Stock

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$15.511

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$15.886

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1,580

$15.511

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$15.886

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AZTECH Wire

Italy . 372 parts In-Stock

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$16.066

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372

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ChromeModa Solutions

Germany . 6,312 parts In-Stock

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$17.428

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$14.291

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6,312

$17.428

$14.291

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IDEA Electronic Components Group

UK . 1,890 parts In-Stock

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$17.428

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$16.557

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$15.685

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1,890

$17.428

$16.557

$15.685

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DigiPath Technology Company

USA . 2,235 parts In-Stock

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$15.713

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$15.713

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Northwest PG Solutions

USA . 1,661 parts In-Stock

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Microchip USA

USA . 1,264 parts In-Stock

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Native Components

USA . 554 parts In-Stock

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Corphita

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Overview

Elevate your power management game with the BQ24316DSGTG4 by Texas Instruments. Crafted with precision and expertise, this Power Management IC offers unparalleled quality and reliability. Ideal for a variety of applications, this product is designed to optimize performance and efficiency. Say goodbye to power-related concerns as this small outline, heat sink profile IC provides superior voltage regulation and protection. Trust in Texas Instruments to deliver cutting-edge solutions that exceed expectations. Experience seamless power management like never before with the BQ24316DSGTG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Nominal Supply Voltage (Vsup): 5 V

A common and stable supply voltage of 5V allows for compatibility with a wide range of devices and applications.

Power Supplies (V): 3/24

Support for multiple power supplies at 3V and 24V provides versatility in powering different components within a system.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliability and performance in various environmental conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows the product to function in cold environments without issues.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The use of nickel, palladium, and gold terminal finish ensures good conductivity and corrosion resistance for reliable connections.

Maximum Supply Voltage (Vsup): 26 V

Support for up to 26V maximum supply voltage allows for powering a wide range of components and systems.

Adjustable Threshold: YES

The ability to adjust the threshold voltage provides flexibility in setting specific parameters for different applications.

Technical Specifications

Power Management ICs BQ24316DSGTG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 6.8V

Adjustable Threshold:

YES

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Length:

2 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.08,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/24

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.6 mA

Maximum Supply Voltage (Vsup):

26 V

Minimum Supply Voltage (Vsup):

3.3 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.7V

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

2 mm

Trade Compliance

BQ24316DSGTG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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