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BQ24022DRCRG4

Texas Instruments

BQ24022DRCRG4 by Texas Instruments

BQ24022DRCRG4 by Texas Instruments is a Power Management IC with 10 terminals, operating voltage of 4.5-6.5V, and temperature range of -40 to 125°C. It is ideal for automotive applications due to its small outline package and low supply current of 2mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 18,400 parts In-Stock

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Cyclops Electronics Ltd

UK . 17,017 parts In-Stock

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Vyrian

USA . 4,671 parts In-Stock

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Digiode

USA . 1,938 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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VNN

France . 71 parts In-Stock

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71

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One Stop Electronics

USA . 1,604 parts In-Stock

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$4.500

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1,604

$4.500

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Ampacity Inc.

Singapore . 1,519 parts In-Stock

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$4.500

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$4.500

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AZTECH Wire

Italy . 306 parts In-Stock

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$7.036

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306

$7.036

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Parana Technologies

USA . 99 parts In-Stock

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$10.137

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$941.384

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$9.123

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99

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$9.123

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DigiPath Technology Company

USA . 2,227 parts In-Stock

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$11.162

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$10.269

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$11.162

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IDEA Electronic Components Group

UK . 2,228 parts In-Stock

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$11.390

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$10.820

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$10.251

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ChromeModa Solutions

Germany . 1,026 parts In-Stock

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$11.390

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$9.340

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Kepictronics

USA . 9,000 parts In-Stock

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Corphita

USA . 2,494 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Microchip USA

USA . 1,546 parts In-Stock

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Overview

Discover the innovative BQ24022DRCRG4 by Texas Instruments, a high-quality Power Management IC designed to optimize power supplies in various applications. With Texas Instruments' reputation for excellence, this product ensures reliability and efficiency. Ideal for automotive environments, this IC offers dual channels and a small outline package for easy integration. Experience the benefits of enhanced power support and performance with the BQ24022DRCRG4, providing value and reliability for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to heat, making the product suitable for various environments.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and improving efficiency.

Power Supplies (V): 4.5/6.5

Supports a wide range of power supplies, providing flexibility in design and compatibility with different systems.

No. of Terminals: 10

Offers multiple connection points, enabling the product to handle complex power management tasks.

Maximum Operating Temperature: 125 °C

Ensures reliable performance even in high-temperature conditions, essential for demanding applications.

Width (mm): 3 mm

Compact size allows for integration into small devices or tight spaces.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards, suitable for use in vehicles and automotive applications.

Maximum Supply Current (Isup): 2 mA

Efficient power management with low supply current consumption, helping to conserve energy.

Technical Specifications

Power Management ICs BQ24022DRCRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

S-PDSO-N10

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC10,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

4.5/6.5

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

2 mA

Maximum Supply Voltage (Vsup):

6.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3 mm

Trade Compliance

BQ24022DRCRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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