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BCY87

Texas Instruments

BCY87 by Texas Instruments

BCY87 by Texas Instruments is an NPN transistor with a max power dissipation of 0.15W and min DC current gain of 100. With a max operating temp of 175°C, it's ideal for applications requiring low collector current such as signal amplification in electronic circuits up to 10MHz frequency.

Median Price

$6.840

Lifecycle Status

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Tomark Electronics Ltd

UK . 105 parts In-Stock

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$3.680

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Ace Electronics

USA . 8,396 parts In-Stock

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Digiode

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Vyrian

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VNN

France . 5,280 parts In-Stock

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Executive Electronics, Inc.

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Anansix

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Euro-Tech

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Manotoh

Italy . 50 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Sinequanon

UK . 35 parts In-Stock

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Electronic Expediters

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Huijzer Components

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ICP Electronique

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Holdelec - ElecDif-Pro

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GES GmbH

Germany . 8 parts In-Stock

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MISTER SPROCKETS

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ECAB

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LittleDiode

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Parana Technologies

USA . 2,202 parts In-Stock

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$1.000

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$1.883

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$1.000

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Corohmni

South Africa . 863 parts In-Stock

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$1.097

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DigiPath Technology Company

USA . 902 parts In-Stock

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$1.102

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$1.013

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$1.102

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ChromeModa Solutions

Germany . 1,442 parts In-Stock

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$1.124

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$0.922

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IDEA Electronic Components Group

UK . 724 parts In-Stock

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$1.012

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AZTECH Wire

Italy . 207 parts In-Stock

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$15.820

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One Stop Electronics

USA . 2,567 parts In-Stock

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Assy Fe

Spain . 5,569 parts In-Stock

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Corphita

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Continental Prestige Electronics

USA . 2,737 parts In-Stock

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Argo Parts USA

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Aranea Global

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UNI Independent Distributors

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Cyclops Electronics Ltd (Excess)

UK . 335 parts In-Stock

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Overview

The Texas Instruments BCY87 NPN transistor offers top-notch quality and reliability for a wide range of applications. With a minimum DC current gain of 100 and a maximum operating temperature of 175°C, this transistor delivers exceptional performance in a single configuration. Whether you're designing audio amplifiers, signal processing circuits, or voltage regulators, this transistor provides the value, benefits, and advantages you need to bring your projects to life. Trust Texas Instruments for superior components that deliver results.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various electronic applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Maximum Power Dissipation (Abs): 0.15 W

The maximum power dissipation of 0.15 W indicates that this transistor can handle a moderate amount of power, suitable for low to medium power applications.

Minimum DC Current Gain (hFE): 100

With a minimum DC current gain of 100, this transistor provides efficient and reliable amplification of current, making it suitable for signal amplification purposes.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can withstand high temperatures, offering reliability in various operating conditions.

Maximum Collector Current (IC): 0.03 A

The maximum collector current of 0.03 A allows for sufficient current handling capacity, making this transistor suitable for low to medium current applications.

Nominal Transition Frequency (fT): 10 MHz

The nominal transition frequency of 10 MHz indicates that this transistor is capable of operating at high frequencies, making it suitable for applications that require fast signal switching or amplification.

Technical Specifications

Other Function Transistors BCY87 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BCY87 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-12-198-3474, 5961121983474, 5961-14-355-3996, 5961143553996

NIIN

121983474, 143553996

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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