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AM26C31MJB

Texas Instruments

AM26C31MJB by Texas Instruments

AM26C31MJB by Texas Instruments is a 4-function line driver with max supply voltage of 5.5V and transmit delay of 12ns. Ideal for EIA-422-B, TIA-422-B, V.11 interfaces in military-grade applications due to its BICMOS technology and TRUE output polarity.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 7,194 parts In-Stock

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Digiode

USA . 3,918 parts In-Stock

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Speed Components Ltd

Israel . 24 parts In-Stock

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Resion

USA . 9 parts In-Stock

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MRC Electronics

USA . 2 parts In-Stock

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Electronic Expediters

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Native Components

USA . 466 parts In-Stock

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$0.074

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$0.071

466

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$0.071

Northwest PG Solutions

USA . 1,958 parts In-Stock

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$0.081

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$0.072

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$0.081

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Parana Technologies

USA . 135 parts In-Stock

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$11.202

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$1,040.316

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$10.082

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DigiPath Technology Company

USA . 1,231 parts In-Stock

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$12.335

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ChromeModa Solutions

Germany . 4,121 parts In-Stock

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$12.587

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$10.321

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IDEA Electronic Components Group

UK . 1,790 parts In-Stock

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$11.958

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$11.328

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Advanced Electronics

New Zealand . 18 parts In-Stock

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$14.486

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$13.054

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AZTECH Wire

Italy . 850 parts In-Stock

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Corohmni

South Africa . 10 parts In-Stock

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One Stop Electronics

USA . 677 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

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Microchip USA

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Component Stockers USA

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Corphita

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Overview

Elevate your electronic designs with the AM26C31MJB by Texas Instruments, a top-tier manufacturer known for reliability and innovation. As a leading product in the Line Drivers & Receivers category, this ceramic, glass-sealed gem offers unparalleled performance and versatility. With a maximum transmit delay of just 12 ns and a true differential output, it's perfect for high-speed data transmission applications. Experience the value and benefits of this military-grade technology today and take your projects to new heights with Texas Instruments.

Feature Benefit Bullets

Maximum Supply Voltage: 5.5 V

High maximum supply voltage allows for versatile use in a variety of applications.

Maximum Transmit Delay: 12 ns

Low transmit delay ensures fast and efficient signal transmission.

No. of Functions: 4

Multiple functions in one unit provide flexibility and cost-effectiveness.

Output Polarity: TRUE

True output polarity ensures accurate and reliable signal transmission.

Differential Output: YES

Differential output helps in reducing noise and improving signal integrity.

Technology: BICMOS

BICMOS technology combines the advantages of both bipolar and CMOS technologies, offering high performance and low power consumption.

Interface Standard: EIA-422-B; TIA-422-B; V.11

Compliance with these interface standards ensures compatibility with a wide range of systems and devices.

Temperature Grade: MILITARY

Military-grade temperature range allows for use in harsh environmental conditions.

Technical Specifications

Line Drivers & Receivers AM26C31MJB attributes and parameters. Explore more Line Drivers & Receivers devices from Texas Instruments

Specs

Differential Output:

YES

Driver No. of Bits:

4

Maximum High Level Input Current:

.000001 Amp

Input Characteristics:

STANDARD

Interface IC Type:

Interface Standard:

EIA-422-B; TIA-422-B; V.11

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

No. of Functions:

4

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Minimum Out Swing:

2 V

Output Characteristics:

3-STATE

Maximum Output Low Current:

20000 Amp

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Receive Delay:

0 ns

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

Line Driver or Receivers

Maximum Supply Current:

3.2 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

4 V

Maximum Supply Voltage-1:

5.5 V

Minimum Supply Voltage-1:

4.5 V

Nominal Supply Voltage-1:

5 V

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Transmit Delay:

12 ns

Width:

7.62 mm

Trade Compliance

AM26C31MJB Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-553-5909, 5962015535909

NIIN

015535909

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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