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ADS5521IPAPR

Texas Instruments

ADS5521IPAPR by Texas Instruments

Texas Instruments' ADS5521IPAPR is a 12-bit ADC with 0.0366% EL, 105 MHz sample rate, and 3.3V supply voltage. Ideal for industrial applications requiring high-speed data conversion in a compact square package with GULL WING terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,368 parts In-Stock

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Digiode

USA . 3,377 parts In-Stock

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Connector Distribution Corp

USA . 5 parts In-Stock

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Right Parts Inc.

USA . 5 parts In-Stock

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AZTECH Wire

Italy . 601 parts In-Stock

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$13.124

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601

$13.124

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Parana Technologies

USA . 296 parts In-Stock

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$18.102

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$18.244

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296

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DigiPath Technology Company

USA . 1,679 parts In-Stock

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$19.932

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$19.932

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IDEA Electronic Components Group

UK . 2,357 parts In-Stock

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$20.339

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$19.322

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$18.305

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2,357

$20.339

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$18.305

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ChromeModa Solutions

Germany . 833 parts In-Stock

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$20.339

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$16.678

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833

$20.339

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One Stop Electronics

USA . 1,395 parts In-Stock

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$37.000

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$37.000

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Corphita

USA . 3,714 parts In-Stock

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Northwest PG Solutions

USA . 988 parts In-Stock

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Microchip USA

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Native Components

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Overview

Unlock the power of high-quality analog-to-digital conversion with the ADS5521IPAPR by Texas Instruments. Manufactured by a trusted industry leader, this 12-bit ADC offers unparalleled precision and efficiency for a wide range of applications. With a sample rate of 105 MHz and a maximum linearity error of just 0.0366%, this versatile converter provides reliable performance in industrial-grade environments. Experience the value of superior data acquisition with the ADS5521IPAPR, designed to deliver optimal results and unmatched reliability for your projects.

Feature Benefit Bullets

No. of Bits: 12

High resolution allows for accurate conversion of analog signals into digital data.

Maximum Linearity Error (EL): 0.0366%

Low linearity error ensures precise conversion of analog signals without introducing significant distortion.

Power Supplies (V): 3.3

Operates on a common voltage supply making it compatible with a wide range of existing systems.

Package Style (Meter): FLATPACK, HEAT SINK/SLUG, THIN PROFILE, FINE PITCH

Multiple packaging options provide flexibility for different application requirements.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments.

Sample Rate: 105 MHz

High sample rate allows for fast and efficient conversion of analog signals.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Analog-to-Digital Converters ADS5521IPAPR attributes and parameters. Explore more Analog-to-Digital Converters devices from Texas Instruments

Converter Specifications

No. of Analog In Channels:

1

No. of Functions:

1

No. of Bits:

12

Sub-Category:

Analog to Digital Converters

Output Bit Code:

Binary, Offset Binary, 2's Complement Binary

Output Format:

Parallel, Word

Maximum Linearity Error (EL):

0.0366 %

Sample Rate:

105 MHz

Hold Mode:

Sample

Electrical Specifications

Power Supplies:

3.3 V

Minimum Analog Input Voltage:

0 mV

Maximum Analog Input Voltage:

2.3 V

Nominal Supply Voltage:

3.3 V

Operating Conditions

Minimum Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Temperature Grade:

Form Factor

Terminal Position:

Quad

No. of Terminals:

64

Terminal Form:

Terminal Pitch:

0.02 in (0.5 mm)

Surface Mount:

Yes

Width:

0.394 in (10 mm)

Length:

0.394 in (10 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Packaging

Package Body Material:

Plastic/Epoxy

Package Style:

Flatpack, Heat Sink/Slug, Thin Profile, Fine Pitch

Package Shape:

Package Equivalence Code:

TQFP64,.47SQ

Package Code:

Standards and Codes

JESD-30 Code:

S-PQFP-G64

Qualified:

No

Trade Compliance

ADS5521IPAPR Converters trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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