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74LVC1G139DCURE4

Texas Instruments

74LVC1G139DCURE4 by Texas Instruments

74LVC1G139DCURE4 by Texas Instruments is a CMOS Decoder & Driver with 5.9ns Propagation Delay, 24A Max I (ol), and -40 to 85°C Operating Temperature range. It is ideal for industrial applications requiring fast signal processing in compact designs due to its small outline package and low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,972 parts In-Stock

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Digiode

USA . 885 parts In-Stock

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AZTECH Wire

Italy . 321 parts In-Stock

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$6.677

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One Stop Electronics

USA . 218 parts In-Stock

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Parana Technologies

USA . 2,094 parts In-Stock

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DigiPath Technology Company

USA . 1,197 parts In-Stock

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ChromeModa Solutions

Germany . 1,303 parts In-Stock

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IDEA Electronic Components Group

UK . 727 parts In-Stock

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$18.630

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$17.650

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Component Stockers USA

USA . 509 parts In-Stock

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$99.990

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Corphita

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Northwest PG Solutions

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Microchip USA

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Overview

Unlock the power of seamless decoding and driving with the 74LVC1G139DCURE4 by Texas Instruments, a top-tier manufacturer known for its exceptional quality and reliability. Ideal for a range of applications in the decoder and driver category, this innovative product offers customers unmatched value and benefits. With a compact design, fast propagation delay, and versatile surface mount capabilities, the 74LVC1G139DCURE4 delivers high performance and efficiency, making it the perfect choice for your electronic projects. Experience the difference with Texas Instruments today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making it a good choice for a decoder & driver product that needs to be reliable and affordable.

Propagation Delay At Nominal Supply: 5.9 ns

Low propagation delay ensures fast signal processing, making this product ideal for applications where timing is critical.

Surface Mount: YES

Surface mount technology allows for easy assembly and space-saving on PCBs, making this product convenient for integration into various electronic devices.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low nominal supply voltage, which can help reduce power consumption and extend battery life in portable devices.

Output Characteristics: 3-STATE

The 3-STATE output allows for high impedance when disabled, enabling multiple devices to be connected to a bus without interference, increasing versatility.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, making this product energy-efficient and reliable in noisy environments.

Technical Specifications

Decoder & Drivers 74LVC1G139DCURE4 attributes and parameters. Explore more Decoder & Drivers devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

Input Conditioning:

STANDARD

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

5.9 ns

Propagation Delay (tpd):

16.7 ns

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Decoder/Drivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

74LVC1G139DCURE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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