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1N560

Texas Instruments

1N560 by Texas Instruments

1N560 by Texas Instruments is a single rectifier diode with max VF of 1.8V and max output current of 0.25A. Operating at up to 140°C, it offers a max reverse voltage of 800V and non-repetitive forward current of 1A. Ideal for power supply applications.

Median Price

$12.280

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 2 parts In-Stock

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Vyrian

USA . 7,685 parts In-Stock

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Digiode

USA . 4,654 parts In-Stock

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Electronic Expediters

USA . 832 parts In-Stock

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PUI

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Manoshevitz Elec. Sales

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ICP Electronique

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ECAB

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Resion

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Electronics Depot

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Parana Technologies

USA . 67 parts In-Stock

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$0.093

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$1.454

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DigiPath Technology Company

USA . 77 parts In-Stock

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$0.103

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ChromeModa Solutions

Germany . 2,846 parts In-Stock

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$0.105

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$0.086

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IDEA Electronic Components Group

UK . 94 parts In-Stock

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Native Components

USA . 1,167 parts In-Stock

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$0.354

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$0.339

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Northwest PG Solutions

USA . 3,838 parts In-Stock

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$0.389

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$0.343

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One Stop Electronics

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$1.010

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AZTECH Wire

Italy . 436 parts In-Stock

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Corphita

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RTC Component Inc.

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Overview

Unlock the power of precision and reliability with the 1N560 diode by Texas Instruments. Designed with quality and durability in mind, this RECTIFIER DIODE offers a maximum output current of 0.25 A and a maximum repetitive peak reverse voltage of 800 V. Ideal for a wide range of applications, this diode provides customers with unmatched value and performance. Trust in Texas Instruments to deliver the innovation you need for your next project.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Maximum Operating Temperature: 140 °C

High operating temperature tolerance allows for reliable performance in a variety of environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting AC to DC and have low forward voltage drop, making them efficient for power supplies.

Maximum Forward Voltage (VF): 1.8 V

Low forward voltage ensures minimal power loss and efficient operation.

Maximum Output Current: 0.25 A

Able to handle up to 0.25 A of output current, making it suitable for various low to medium power applications.

Maximum Repetitive Peak Reverse Voltage: 800 V

High reverse voltage rating provides protection against voltage surges and spikes in the circuit.

Maximum Non Repetitive Peak Forward Current: 1 A

Capable of handling short-duration peak currents up to 1 A, ensuring reliability under transient conditions.

Technical Specifications

Diodes & Rectifiers 1N560 attributes and parameters. Explore more Diodes & Rectifiers devices from Texas Instruments

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

140 Cel

Maximum Output Current:

.25 A

Maximum Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

1N560 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-712-3958, 5961007123958

NIIN

007123958

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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