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TN0200TST1

Temic Semiconductors

TN0200TST1 by Temic Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; Terminal Form: GULL WING;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Small Signal Field Effect Transistors (FET) TN0200TST1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Temic Semiconductors

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

1.2 A

Maximum Drain-Source On Resistance:

.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TN0200TST1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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