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GBU2506D2G

Taiwan Semiconductor

GBU2506D2G by Taiwan Semiconductor

GBU2506D2G by Taiwan Semiconductor is a bridge rectifier diode with 4 elements, capable of handling up to 25A output current and 800V reverse voltage. It operates b/w -55°C to 150°C, making it suitable for various applications requiring high power rectification in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,062 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 270 parts In-Stock

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$9.340

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270

$9.340

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Bastille Electronics

Australia . 450 parts In-Stock

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Overview

Discover the superior quality and reliability of the GBU2506D2G by Taiwan Semiconductor, a leading manufacturer in the industry. As a versatile Bridge Rectifier Diode, this product offers exceptional performance and efficiency for a wide range of applications. With a maximum reverse current of 10 uA and a maximum output current of 25 A, this diode provides unmatched functionality and stability. Trust Taiwan Semiconductor to deliver innovative solutions that exceed expectations and elevate your projects to new heights. Upgrade to the GBU2506D2G today and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and resistance to environmental factors, making it a reliable choice.

Config: BRIDGE, 4 ELEMENTS

The bridge configuration with 4 elements allows for full-wave rectification, making this diode suitable for various applications requiring high efficiency.

Maximum Reverse Current: 10 uA

With a low maximum reverse current of 10 uA, this diode offers improved efficiency and reliability in reverse bias conditions.

Package Shape: RECTANGULAR

The rectangular package shape provides easy mounting and space-saving benefits, making it convenient for circuit integration.

Reverse Test Voltage: 800 V

The high reverse test voltage of 800 V ensures robust performance and protection against reverse polarity situations.

No. of Terminals: 4

Having 4 terminals allows for easy connectivity and installation, simplifying the overall circuit design.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure mounting options and stability, ideal for applications requiring mechanical support.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this diode can withstand high-temperature environments without compromising performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C ensures reliable operation even in extreme cold conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring a durable connection.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, making it user-friendly for various applications.

Minimum Breakdown Voltage: 800 V

The high minimum breakdown voltage of 800 V ensures protection against voltage spikes and overloads, enhancing the diode's reliability.

Maximum Time At Peak Reflow Temperature (s): 10

This diode can withstand peak reflow temperatures for up to 10 seconds, making it suitable for soldering processes without compromising its performance.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this diode can undergo reflow soldering processes efficiently, ensuring proper connectivity.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures compliance with safety standards, giving users peace of mind regarding product quality and reliability.

Diode Type: BRIDGE RECTIFIER DIODE

The bridge rectifier diode type is ideal for converting AC to DC with high efficiency, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1.2 V

The low maximum forward voltage of 1.2 V reduces power losses and improves overall energy efficiency in the diode's operation.

Maximum Output Current: 25 A

With a maximum output current of 25 A, this diode can handle high current loads, making it suitable for power applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers easy soldering and secure mounting, ensuring stable connections in circuit boards.

No. of Elements: 4

Having 4 elements allows for full-wave rectification, enhancing the diode's efficiency in converting AC to DC.

Maximum Repetitive Peak Reverse Voltage: 800 V

The high maximum repetitive peak reverse voltage of 800 V provides robust protection against reverse polarity conditions, ensuring reliable performance.

Maximum Non Repetitive Peak Forward Current: 300 A

With a maximum non-repetitive peak forward current of 300 A, this diode can handle surges and peak currents, making it suitable for demanding applications.

Diode Element Material: SILICON

The silicon diode element material offers high reliability and efficiency in converting AC to DC, making it a trusted choice for various electronic circuits.

Technical Specifications

Bridge Rectifier Diodes GBU2506D2G attributes and parameters. Explore more Bridge Rectifier Diodes devices from Taiwan Semiconductor

Specs

Minimum Breakdown Voltage:

800 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

800 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

800 V

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

GBU2506D2G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

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