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PAT3060H-C-6DB-T1

Susumu

PAT3060H-C-6DB-T1 by Susumu

Susumu's PAT3060H-C-6DB-T1 is a 6 dB fixed attenuator with max input power of 36.99 dBm and VSWR of 1.2. Ideal for RF/Microwave applications, it operates from -55°C to 125°C, covering frequencies from 0 MHz to 6000 MHz in a surface mount construction.

Median Price

$5.280

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 738 parts In-Stock

1+ parts

$5.280

100+ parts

$3.980

1k+ parts

$3.568

10k+ parts

$3.438

738

$5.280

$3.980

$3.568

$3.438

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$3.095

100+ parts

-

1k+ parts

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300

$3.095

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Vyrian

USA . 7,953 parts In-Stock

1+ parts

-

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7,953

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 50 parts In-Stock

1+ parts

$3.095

100+ parts

$3.033

1k+ parts

-

10k+ parts

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50

$3.095

$3.033

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Ampacity Inc.

Singapore . 570 parts In-Stock

1+ parts

$5.390

100+ parts

-

1k+ parts

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570

$5.390

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AZTECH Wire

Italy . 694 parts In-Stock

1+ parts

$17.542

100+ parts

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694

$17.542

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Overview

Enhance your RF and microwave applications with the PAT3060H-C-6DB-T1 attenuator by Susumu. This high-quality component offers a nominal attenuation of 6 dB and can handle a maximum input power of 36.99 dBm, providing reliable performance in a wide range of temperature conditions. With a low voltage standing wave ratio of 1.2, this fixed attenuator ensures optimal signal integrity and efficiency. Trust Susumu's expertise in RF technology to deliver exceptional value and benefits to your projects. Upgrade your systems today with the PAT3060H-C-6DB-T1 for superior performance and reliability.

Feature Benefit Bullets

Maximum Input Power (CW): 36.99 dBm

High maximum input power allows for greater flexibility and reliability in various applications.

Maximum Voltage Standing Wave Ratio: 1.2

Low VSWR indicates efficient power transfer and minimal signal reflection.

Nominal Attenuation: 6 dB

Provides a moderate level of signal attenuation, suitable for many RF and microwave applications.

Construction: COMPONENT

Component level construction ensures high quality and reliability for the attenuator.

No. of Terminals: 3

Having three terminals allows for easy connection in a circuit or system.

Maximum Operating Temperature: 125 °C

Wide operating temperature range provides versatility in different environmental conditions.

Minimum Operating Temperature: -55 °C

Ability to operate at low temperatures makes this attenuator suitable for a variety of applications.

RF or Microwave Device Type: FIXED ATTENUATOR

Fixed attenuators offer consistent attenuation levels and are ideal for applications that require a set amount of signal reduction.

Characteristic Impedance: 50 ohm

Matched impedance ensures efficient power transfer and minimal signal loss.

Minimum Operating Frequency: 0 MHz

Wide frequency range allows for use in a variety of RF and microwave systems.

Mounting Feature: SURFACE MOUNT

Ease of surface mounting simplifies installation in various electronic devices and systems.

Maximum Operating Frequency: 6000 MHz

High maximum operating frequency makes this attenuator suitable for a wide range of RF and microwave applications.

Technical Specifications

RF/Microwave Attenuators PAT3060H-C-6DB-T1 attributes and parameters. Explore more RF/Microwave Attenuators devices from Susumu

Specs

Nominal Attenuation:

6 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

36.99 dBm

Mounting Feature:

No. of Terminals:

3

Maximum Operating Frequency:

6000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

1.2

Manufacturer Highlights

Susumu

As a specialist in thin film technology and resistors, we can turn your ideas into reality. Since our founding in 1964, we have pursued the originality of thin films through research into thin film technology and product development. A corporate culture that dedicates itself to commercialization in the face of difficulties, self-confidence cultivated through repeated basic research, and unique development capabilities enabled by experienced thin-film technology. This is the reason why Susumu is able to acquire a global position and trust. We have the ability to integrate organically while improving each technology. In particular, our thin film deposition technology is backed by our high level of basic research, and there are things that surpass our competitors. Thin film formation technology (plasma reaction method, sputtering, vacuum deposition method, etc.) Fine photo-etching technology (flat/curved surface etching) Microlaser technology (pattern generation, trimming, scribing, etc.) High-density packaging technology (BGA, ultra-small chips, etc.)

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