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PAT0510S-C-5DB-T10

Susumu

PAT0510S-C-5DB-T10 by Susumu

FIXED ATTENUATOR; Maximum Operating Frequency: 10000 MHz; Maximum Input Power (CW): 15.05 dBm; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 1.3; Minimum Operating Temperature: -55 Cel;

Median Price

$0.057

Lifecycle Status

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1k+

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DigiKey

USA . 106,215 parts In-Stock

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$0.120

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$0.087

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$0.075

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$0.068

106,215

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$0.068

Mouser Electronics

USA . 14,576 parts In-Stock

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$0.120

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$0.087

1k+ parts

$0.073

10k+ parts

$0.066

14,576

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$0.066

Arrow

USA . 10,000 parts In-Stock

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100+ parts

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$0.057

10,000

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Verical

USA . 10,000 parts In-Stock

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Chip1Stop

Japan . 11 parts In-Stock

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$0.041

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NAC Semi

USA . 20,000 parts In-Stock

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IBS Electronics

USA . 10,000 parts In-Stock

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Sunrise Surplus Inc.

USA . 9,980 parts In-Stock

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9,980

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Speed Components Ltd

Israel . 8,898 parts In-Stock

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Semtec, LLC

USA . 1,600 parts In-Stock

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1,600

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Perfect Parts

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Technical Specifications

RF/Microwave Attenuators PAT0510S-C-5DB-T10 attributes and parameters. Explore more RF/Microwave Attenuators devices from Susumu

Specs

Nominal Attenuation:

5 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

15.05 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

10000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

RF or Microwave Device Type:

Terminal Finish:

Matte Tin (Sn)

Maximum Voltage Standing Wave Ratio:

1.3

Manufacturer Highlights

Susumu

As a specialist in thin film technology and resistors, we can turn your ideas into reality. Since our founding in 1964, we have pursued the originality of thin films through research into thin film technology and product development. A corporate culture that dedicates itself to commercialization in the face of difficulties, self-confidence cultivated through repeated basic research, and unique development capabilities enabled by experienced thin-film technology. This is the reason why Susumu is able to acquire a global position and trust. We have the ability to integrate organically while improving each technology. In particular, our thin film deposition technology is backed by our high level of basic research, and there are things that surpass our competitors. Thin film formation technology (plasma reaction method, sputtering, vacuum deposition method, etc.) Fine photo-etching technology (flat/curved surface etching) Microlaser technology (pattern generation, trimming, scribing, etc.) High-density packaging technology (BGA, ultra-small chips, etc.)

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