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XL0840-AP

STMicroelectronics

XL0840-AP by STMicroelectronics

XL0840-AP by STMicroelectronics is a single SCR in a cylindrical plastic/epoxy package, ideal for controlling high voltage applications. It features a max repetitive peak off-state voltage of 400 V and can handle up to 8 A non-repetitive peak on-state current. Operating b/w -40 °C and 125 °C, it’s perfect for robust electronic designs.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,442 parts In-Stock

1+ parts

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4,442

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Digiode

USA . 3,182 parts In-Stock

1+ parts

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3,182

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Anansix

USA . 2,478 parts In-Stock

1+ parts

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2,478

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 112 parts In-Stock

1+ parts

$3.856

100+ parts

-

1k+ parts

$3.470

10k+ parts

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112

$3.856

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$3.470

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MKK Technologies

India . 1,382 parts In-Stock

1+ parts

$7.250

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-

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1,382

$7.250

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DigiPath Technology Company

USA . 1,382 parts In-Stock

1+ parts

$7.250

100+ parts

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1,382

$7.250

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Corphita

USA . 696 parts In-Stock

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696

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Parana Technologies

USA . 40 parts In-Stock

1+ parts

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100+ parts

$4.610

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40

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$4.610

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Overview

Experience unparalleled reliability and performance with the XL0840-AP from STMicroelectronics, a leader in semiconductor innovation. This high-quality Silicon Controlled Rectifier (SCR) excels in diverse applications, from power management to motor control, ensuring efficiency and durability. With low leakage currents and robust temperature tolerance, customers benefit from enhanced circuit stability and longevity, making it the ideal choice for your electronic projects. Elevate your designs with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the SCR suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for energy-efficient operation and easy integration into low-power circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces footprint on PCBs, which is advantageous for compact applications.

Non Repetitive Peak On-state Current: 8 A

This high peak on-state current capability allows the SCR to handle significant transient loads, making it reliable in demanding scenarios.

Package Shape: ROUND

The round shape facilitates easy mounting and ensures efficient thermal dissipation, enhancing the performance of the SCR.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and make the SCR suitable for various circuit board designs.

Maximum On-state Current: 0.5 A

This maximum on-state current rating makes the SCR ideal for controlling moderate levels of power in various applications.

Maximum Repetitive Peak Off-state Leakage Current: 0.1 µA

Extremely low off-state leakage current enhances the efficiency of power circuits and reduces power loss when the device is not in operation.

No. of Terminals: 3

The 3-terminal design allows for versatile implementations, supporting various circuit configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical packaging optimizes space and thermal management, making it suitable for integration in compact devices.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures, this SCR is suitable for use in demanding environments with elevated thermal conditions.

Trigger Device Type: SCR

As an SCR, it allows for controlled switching in high-power applications, making it a versatile choice in power electronics and phase control.

Minimum Operating Temperature: -40 °C

The wide temperature range enables this SCR to function effectively in extreme conditions, broadening its application scope.

Terminal Position: BOTTOM

Bottom terminal positioning enhances PCB space utilization, allowing for more compact and efficient design layouts.

Maximum RMS On-state Current: 0.8 A

A high RMS on-state current rating supports the use of this SCR in various high-power applications, ensuring reliability.

Maximum DC Gate Trigger Voltage: 0.8 V

The low gate trigger voltage requirement simplifies circuit design and minimizes power dissipation in control signals.

Repetitive Peak Off-state Voltage: 400 V

This high voltage capability allows the SCR to be effectively used in high-voltage applications, ensuring safety and reliability.

Minimum Critical Rate of Rise of Off-state Voltage: 75 V/µs

A high rate of voltage rise capability enhances the SCR's ability to respond quickly in dynamic applications, improving overall reliability.

Maximum Holding Current: 5 mA

The low holding current requirement allows for easier control and ensures the SCR can turn off reliably in applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) XL0840-AP attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

75 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

Non Repetitive Peak On-state Current:

8 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

.8 A

Maximum Repetitive Peak Off-state Leakage Current:

.1 uA

Repetitive Peak Off-state Voltage:

400 V

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

XL0840-AP Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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