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VNV10N0713TR

STMicroelectronics

VNV10N0713TR by STMicroelectronics

VNV10N0713TR by STMicroelectronics is a compact peripheral driver with a max output peak current of 10 A and built-in protections against overcurrent and thermal issues. Its small outline package (3.75 mm height) enables efficient surface mounting. Ideal for buffer or inverter applications, it features fast turn-on (0.9 µs) and turn-off (6 µs) times.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,077 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,077

-

-

-

-

Anansix

USA . 2,580 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,580

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-

-

-

Digiode

USA . 1,432 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,432

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 505 parts In-Stock

1+ parts

$1.500

100+ parts

-

1k+ parts

-

10k+ parts

-

505

$1.500

-

-

-

IDEA Electronic Components Group

UK . 943 parts In-Stock

1+ parts

$9.424

100+ parts

-

1k+ parts

$8.481

10k+ parts

-

943

$9.424

-

$8.481

-

MKK Technologies

India . 156 parts In-Stock

1+ parts

$17.720

100+ parts

-

1k+ parts

-

10k+ parts

-

156

$17.720

-

-

-

DigiPath Technology Company

USA . 156 parts In-Stock

1+ parts

$17.720

100+ parts

-

1k+ parts

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10k+ parts

-

156

$17.720

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-

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Microchip USA

USA . 438 parts In-Stock

1+ parts

$58.563

100+ parts

-

1k+ parts

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10k+ parts

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438

$58.563

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-

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Corphita

USA . 4,320 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,320

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-

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Parana Technologies

USA . 1,585 parts In-Stock

1+ parts

-

100+ parts

$11.267

1k+ parts

-

10k+ parts

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1,585

-

$11.267

-

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Overview

Elevate your designs with the VNV10N0713TR from STMicroelectronics, a leader in cutting-edge semiconductor solutions. This robust peripheral driver combines unparalleled reliability with advanced built-in protections against overcurrent and thermal issues, ensuring seamless operation in diverse applications. With its compact size and swift response time, it offers exceptional performance while simplifying your project's complexities. Experience the STMicroelectronics advantage and drive innovation forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Being surface mount compatible allows for easier and more efficient PCB assembly and reduces the overall size of the circuit board.

Package Shape: RECTANGULAR

The rectangular package shape provides efficient space utilization on PCBs and allows for tighter integration with other components.

Built-in Protections: OVER CURRENT; THERMAL; ZENER CLAMP

These built-in protections enhance reliability by safeguarding the device against common electrical faults, ensuring longer operational life.

No. of Terminals: 10

With 10 terminals, this device provides sufficient connectivity for multiple signal inputs and outputs while maintaining compactness.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports compact design in applications where space is constrained, offering flexibility in layout.

Terminal Position: DUAL

The dual terminal position allows for efficient routing on the PCB and can contribute to balanced electrical performance.

Maximum Seated Height: 3.75 mm

A low seated height ensures better compatibility with thin or compact devices, aiding in applications with space limitations.

Width: 7.5 mm

At only 7.5 mm wide, this specification supports high-density designs, ensuring minimal impact on overall device dimensions.

Length: 9.4 mm

A length of 9.4 mm helps to maintain compactness, making it a preferred choice for modern electronics requiring size efficiency.

Technology: MOS

MOS technology allows for faster switching speeds and lower power consumption, enhancing the efficiency of the peripheral driver.

Terminal Form: GULL WING

Gull wing terminal form provides excellent mechanical stability and ensures reliable solder joints during assembly.

Turn-on Time: 0.9 us

A fast turn-on time of 0.9 microseconds is beneficial for applications requiring quick response times, improving overall system performance.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch allows for compatibility with a variety of PCB designs and provides ease of soldering.

Nominal Output Peak Current Limit: 10 A

Supporting up to 10 A peak current provides versatility for powering diverse peripheral devices, improving application flexibility.

Interface IC Type: BUFFER OR INVERTER BASED PERIPHERAL DRIVER

This interface IC type allows for versatile signal manipulation, enabling a wide range of applications in digital circuits.

Turn-off Time: 6 us

A turn-off time of 6 microseconds ensures effective control over the connected peripherals, minimizing delays in signal processing.

Output Current Flow Direction: SINK

The sink output current flow direction is ideal for driving loads directly while allowing for simple interfacing with logic levels.

Technical Specifications

Peripheral Drivers VNV10N0713TR attributes and parameters. Explore more Peripheral Drivers devices from STMicroelectronics

Specs

Built-in Protections:

OVER CURRENT; THERMAL; ZENER CLAMP

JESD-30 Code:

R-PDSO-G10

Length:

9.4 mm

No. of Functions:

1

No. of Terminals:

10

Output Current Flow Direction:

SINK

Nominal Output Peak Current Limit:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

3.75 mm

Surface Mount:

YES

Technology:

MOS

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

6 us

Turn-on Time:

.9 us

Width:

7.5 mm

Trade Compliance

VNV10N0713TR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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