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VNN1NV0413TR

STMicroelectronics

VNN1NV0413TR by STMicroelectronics

VNN1NV0413TR by STMicroelectronics is a compact MOS peripheral driver with built-in protections against transient, overcurrent, and thermal issues. It features a max output current of 0.5 A and fast turn-on time of 1 µs. Ideal for buffer/inverter applications in space-constrained designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 20,000 parts In-Stock

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Vyrian

USA . 2,058 parts In-Stock

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2,058

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Digiode

USA . 1,672 parts In-Stock

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1,672

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Anansix

USA . 1,318 parts In-Stock

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1,318

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LIBRA Elektronik GmbH

Germany . 897 parts In-Stock

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897

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PC Components Company LLC

USA . 70 parts In-Stock

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70

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Bristol Electronics

USA . 70 parts In-Stock

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70

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Elcom Components

USA . 22 parts In-Stock

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22

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Prism Electronics

USA . 4 parts In-Stock

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Distributors (Availability)

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Microchip USA

USA . 489 parts In-Stock

1+ parts

$2.871

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489

$2.871

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IDEA Electronic Components Group

UK . 1,654 parts In-Stock

1+ parts

$4.635

100+ parts

-

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$4.171

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1,654

$4.635

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$4.171

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AZTECH Wire

Italy . 949 parts In-Stock

1+ parts

$8.260

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949

$8.260

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MKK Technologies

India . 2,118 parts In-Stock

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$8.716

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2,118

$8.716

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DigiPath Technology Company

USA . 2,118 parts In-Stock

1+ parts

$8.716

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2,118

$8.716

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$11.294

100+ parts

$10.278

1k+ parts

$9.261

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5,000

$11.294

$10.278

$9.261

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RC Electronics

USA . 81,110 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 5,004 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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4,000

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Corphita

USA . 2,697 parts In-Stock

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2,697

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A-Z Elektronik GmbH

Germany . 2,673 parts In-Stock

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2,673

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Parana Technologies

USA . 644 parts In-Stock

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$5.542

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644

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$5.542

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Perfect Parts

USA . 40 parts In-Stock

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40

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Overview

Unlock superior performance with the VNN1NV0413TR from STMicroelectronics, a trusted leader in innovative semiconductor solutions. Designed for robust and reliable peripheral driving, this compact device offers built-in protections against transients, overcurrent, and thermal issues, ensuring durability in demanding applications. Experience enhanced efficiency and peace of mind, knowing you’re backed by a manufacturer renowned for quality and excellence. Elevate your projects with unparalleled reliability today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures a long-lasting product, providing resistance to environmental factors and mechanical stress.

Surface Mount: YES

Surface mount technology allows for compact designs, leading to better space efficiency on PCBs.

Package Shape: RECTANGULAR

The rectangular package shape facilitates a more organized layout on the circuit board, improving manufacturing efficiency.

Built-in Protections: TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

Integrated protections enhance reliability by safeguarding the circuit against harmful conditions, ensuring a safe operation.

No. of Terminals: 4

The 4-terminal configuration provides versatility in connections, making integration into various designs easier.

Package Style (Meter): SMALL OUTLINE

The small outline package minimizes the footprint on the PCB, enabling higher density board designs.

Terminal Finish: MATTE TIN

Matte tin finish ensures better solderability, improving the reliability of the connections during the assembly process.

Terminal Position: DUAL

Dual terminal positioning allows for flexible connections and efficient routing on the PCB, simplifying layout.

Maximum Seated Height: 1.8 mm

A low seated height contributes to lower profile designs, ideal for space-constrained applications.

Width: 3.5 mm

A narrow width allows for optimal space usage in densely populated circuit boards.

Length: 6.5 mm

The compact length is suitable for various applications while maintaining compatibility with standard mounting techniques.

Maximum Output Current: 0.5 A

A maximum output current of 0.5 A makes this product suitable for controlling a variety of peripherals without overloading.

Technology: MOS

MOS technology enables efficient switching, leading to lower power consumption and heat generation.

Terminal Form: GULL WING

Gull wing terminal form ensures robust mechanical connections and facilitates easy soldering.

Turn-on Time: 1 us

Fast turn-on time allows for rapid response in applications requiring quick operation and high efficiency.

Terminal Pitch: 2.3 mm

A suitable terminal pitch promotes ease of assembly and reduces the risk of solder bridging on circuit boards.

Nominal Output Peak Current Limit: 1.7 A

Having a peak current limit of 1.7 A supports brief bursts of current, making this driver suitable for transient load conditions.

Interface IC Type: BUFFER OR INVERTER BASED PERIPHERAL DRIVER

Designed for either buffering or inverting, this versatility ensures compatibility with various peripheral devices.

Turn-off Time: 5.5 us

With a turn-off time of 5.5 us, this driver can efficiently manage signal transitions without lag.

Output Current Flow Direction: SINK

Designed to sink current effectively, this product is optimal for driving loads that require this configuration.

Technical Specifications

Peripheral Drivers VNN1NV0413TR attributes and parameters. Explore more Peripheral Drivers devices from STMicroelectronics

Specs

Built-in Protections:

TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

Driver No. of Bits:

1

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Length:

6.5 mm

No. of Functions:

1

No. of Terminals:

4

Output Current Flow Direction:

SINK

Maximum Output Current:

.5 A

Nominal Output Peak Current Limit:

1.7 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOT-223

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

1.8 mm

Sub-Category:

Peripheral Drivers

Surface Mount:

YES

Technology:

MOS

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

2.3 mm

Terminal Position:

DUAL

Turn-off Time:

5.5 us

Turn-on Time:

1 us

Width:

3.5 mm

Trade Compliance

VNN1NV0413TR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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