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VND7N04

STMicroelectronics

VND7N04 by STMicroelectronics

VND7N04 by STMicroelectronics is a MOS technology peripheral driver with built-in protections for transient, over current, and over voltage. It operates in automotive grade temperatures from -40 to 125 °C, with a nominal output peak current limit of 7A. This small outline package driver has an open-drain output polarity and is ideal for buffer or inverter based applications requiring sink flow direction.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,684 parts In-Stock

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Digiode

USA . 2,485 parts In-Stock

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Anansix

USA . 2,339 parts In-Stock

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LittleDiode

UK . 9 parts In-Stock

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Mentor Electronics Marketing, LLC

USA . 9 parts In-Stock

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AZTECH Wire

Italy . 304 parts In-Stock

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$8.020

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IDEA Electronic Components Group

UK . 172 parts In-Stock

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$9.152

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$8.237

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MKK Technologies

India . 761 parts In-Stock

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$17.210

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DigiPath Technology Company

USA . 761 parts In-Stock

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$17.210

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Component Stockers USA

USA . 584 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,672 parts In-Stock

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Kepictronics

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Microchip USA

USA . 5,672 parts In-Stock

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Corphita

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Parana Technologies

USA . 2,340 parts In-Stock

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$10.943

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iodParts Technologies Inc.

India . 350 parts In-Stock

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Assy Fe

Spain . 75 parts In-Stock

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Overview

Discover the VND7N04 from STMicroelectronics, a high-quality peripheral driver designed to deliver exceptional performance and reliability. With built-in protections against transient events, over current, over voltage, and thermal issues, this product ensures peace of mind for your applications. Whether you're working in automotive or industrial settings, the VND7N04 offers true value with its compact design, Schmitt trigger input characteristics, and fast turn-on time. Trust STMicroelectronics for cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the peripheral driver.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Built-in Protections: TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

Ensures the safe operation of the peripheral driver and protects connected devices from potential damage.

Output Characteristics: OPEN-DRAIN

This type of output allows for flexibility in connecting to different types of devices and systems.

Technology: MOS

MOS technology provides high efficiency and low power consumption for the peripheral driver.

Technical Specifications

Peripheral Drivers VND7N04 attributes and parameters. Explore more Peripheral Drivers devices from STMicroelectronics

Specs

Built-in Protections:

TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

Input Characteristics:

SCHMITT TRIGGER

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Length:

6.5 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Output Current Flow Direction:

SINK

Nominal Output Peak Current Limit:

7 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

2.4 mm

Maximum Supply Current:

.5 mA

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Pitch:

2.25 mm

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

7 us

Turn-on Time:

.5 us

Width:

6.1 mm

Trade Compliance

VND7N04 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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