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TSV912AID

STMicroelectronics

TSV912AID by STMicroelectronics

TSV912AID by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 3000 µV and low bias current of just 1 nA. It operates at supply voltages of 3/5 V, making it ideal for automotive applications. With a nominal gain bandwidth of 8 MHz, it's perfect for precision signal processing.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 27,478 parts In-Stock

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Digiode

USA . 4,966 parts In-Stock

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Vyrian

USA . 3,104 parts In-Stock

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3,104

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Anansix

USA . 1,487 parts In-Stock

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1,487

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IDEA Electronic Components Group

UK . 180 parts In-Stock

1+ parts

$5.617

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$5.055

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180

$5.617

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$5.055

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Microchip USA

USA . 364 parts In-Stock

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$6.469

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364

$6.469

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Ampacity Inc.

Singapore . 1,628 parts In-Stock

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$8.410

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1,628

$8.410

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MKK Technologies

India . 1,584 parts In-Stock

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$10.562

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1,584

$10.562

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DigiPath Technology Company

USA . 1,584 parts In-Stock

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$10.562

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1,584

$10.562

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AZTECH Wire

Italy . 725 parts In-Stock

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$11.700

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725

$11.700

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Corphita

USA . 2,338 parts In-Stock

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Vigor

Singapore . 2,149 parts In-Stock

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2,149

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Parana Technologies

USA . 378 parts In-Stock

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$6.716

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378

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$6.716

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Overview

Unlock the power of precision with the TSV912AID operational amplifier from STMicroelectronics. Engineered for excellence, this high-quality component excels in automotive and industrial applications where reliability is paramount. With exceptional low bias current and a wide operating temperature range, it ensures optimal performance in challenging environments, offering unmatched value that translates into enhanced efficiency and longevity for your projects. Trust STMicroelectronics for quality you can rely on!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the product reliable in various applications.

Maximum Input Offset Voltage: 3000 uV

With a low input offset voltage, this op amp provides high accuracy in signal amplification, making it suitable for precision applications.

Maximum Average Bias Current (IIB): 0.000001 uA

The ultra-low average bias current minimizes errors and enhances performance in low-power circuits.

Surface Mount: YES

Suitable for modern PCB designs, allowing for compact and efficient circuit layouts.

Number of Functions: 2

Integration of multiple functions reduces component count, saving space and cost in the final design.

Package Shape: RECTANGULAR

Rectangular shape optimizes space on printed circuit boards, enabling better layout flexibility.

Nominal Common Mode Reject Ratio: 75 dB

A high common mode rejection ratio means better performance in noisy environments, especially in signal processing applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a low nominal supply voltage makes this op amp ideal for battery-powered and energy-efficient applications.

Power Supplies (V): 3/5

Flexibility in power supply voltage options allows compatibility with a wide range of devices.

Number of Terminals: 8

Eight terminals offer ample connection options for diverse configurations, providing design versatility.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs and is favorable for compact electronic designs.

Maximum Supply Voltage Limit: 6 V

This voltage limit ensures that the op amp can operate safely in various environments without risk of damage.

Maximum Operating Temperature: 125 °C

High operating temperature tolerance allows deployment in industrial and automotive applications where heat can be an issue.

Maximum Bias Current (IIB) @25 °C: 0.00001 uA

Even at room temperature, the low bias current ensures high performance and minimal signal distortion.

Frequency Compensation: YES

Integrated frequency compensation enhances stability and reduces susceptibility to oscillations in the circuit.

Minimum Voltage Gain: 5600

A high minimum voltage gain ensures significant amplification of weak signals, making it ideal for sensor applications.

Minimum Operating Temperature: -40 °C

Robust performance at low temperatures makes this op amp suitable for challenging environments, including outdoor and automotive applications.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections over time.

Terminal Position: DUAL

Dual terminal position contributes to flexibility in design, allowing various routing options on the PCB.

Maximum Seated Height: 1.75 mm

The low seated height is advantageous for space-constrained applications, maintaining a sleek profile in designs.

Width: 3.9 mm

Compact width helps to optimize board space and reduce overall product size, suitable for portable devices.

Maximum Time At Peak Reflow Temperature: 40 s

The time specification promotes the reliability of solder joints during assembly, ensuring high-quality manufacturing.

Peak Reflow Temperature: 260 °C

The high peak reflow temperature tolerance allows compatibility with lead-free soldering processes, supporting modern manufacturing standards.

Length: 4.9 mm

The short length contributes to the overall compact design, making it suitable for high-density applications.

Temperature Grade: AUTOMOTIVE

This temperature grade indicates reliability and robustness in automotive applications, where conditions can be extreme.

Low-Bias: YES

Low-bias characteristics are essential for high-precision applications, ensuring minimal impact on the signals being amplified.

Nominal Unity Gain Bandwidth: 8000 kHz

High unity gain bandwidth allows the op amp to handle fast signals effectively, making it suitable for high-frequency applications.

Technology: BICMOS

BICMOS technology combines the advantages of both bipolar and CMOS technologies, enhancing performance and power efficiency.

Terminal Form: GULL WING

Gull wing terminal design facilitates easy soldering and ensures secure connections in the PCB.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it is versatile and can be used in countless applications, from amplification to filtering and signal conditioning.

Maximum Supply Current: 2.2 mA

The low maximum supply current contributes to energy-efficient designs, ideal for battery-powered applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides stable and linear performance, which is essential in many analog applications.

Packing Method: TUBE

The tube packing method ensures that components are protected during transport and can be easily handled during assembly.

Nominal Slow Rate: 4.5 V/us

The specified slow rate allows for effective signal handling without distortion in various application scenarios.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch provides good compatibility with standard PCB designs, simplifying assembly and manufacturing.

Technical Specifications

Operational Amplifiers (Op Amps) TSV912AID attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

8 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

5600

Nominal Slew Rate:

4.5 V/us

Peak Bias Current:

1 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

2.2 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TSV912AID Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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