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TSV632ID

STMicroelectronics

TSV632ID by STMicroelectronics

TSV632ID by STMicroelectronics is a micropower operational amplifier featuring a max input offset voltage of 4500 µV and a nominal voltage of 1.8V. With a common mode reject ratio of 74 dB, it's ideal for automotive applications. Its compact design ensures efficient performance in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,540 parts In-Stock

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5,540

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Digiode

USA . 3,945 parts In-Stock

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Anansix

USA . 694 parts In-Stock

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694

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Microchip USA

USA . 256 parts In-Stock

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$2.379

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256

$2.379

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IDEA Electronic Components Group

UK . 1,488 parts In-Stock

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$5.627

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$5.064

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1,488

$5.627

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$5.064

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MKK Technologies

India . 1,572 parts In-Stock

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$10.581

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$10.581

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DigiPath Technology Company

USA . 1,572 parts In-Stock

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$10.581

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$10.581

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AZTECH Wire

Italy . 328 parts In-Stock

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$17.970

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328

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QUARKTWIN TECHNOLOGY LTD

USA . 10,702 parts In-Stock

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Vigor

Singapore . 2,677 parts In-Stock

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Corphita

USA . 1,942 parts In-Stock

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Parana Technologies

USA . 1,138 parts In-Stock

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$6.728

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$6.728

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Overview

Elevate your designs with the TSV632ID operational amplifier from STMicroelectronics, a trusted leader in semiconductor innovation. This micropower op-amp delivers exceptional performance with remarkable precision and low bias current, making it ideal for automotive and industrial applications. Embrace reliability, efficiency, and superior quality that ensure your projects achieve peak performance while minimizing energy consumption. Experience the STMicroelectronics advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures robustness and protects the integrity of the operational amplifier in various environments.

Maximum Input Offset Voltage: 4500 uV

With a relatively high maximum input offset voltage, this op-amp can be suitable for applications where precision is less critical.

Maximum Average Bias Current (IIB): 0.0001 uA

This low bias current reduces error in precision applications, making it a reliable choice for low-power designs.

Surface Mount: YES

Surface mount technology allows for efficient use of PCB space and simplifies the assembly process in modern electronic designs.

Number of Functions: 2

Having two functional amplifiers in one package helps to save board space and allows for a more compact design.

Package Shape: RECTANGULAR

The rectangular shape is conducive to space-efficient layouts, making integration into design simpler.

Nominal Common Mode Reject Ratio: 74 dB

A common mode rejection ratio of 74 dB allows the op-amp to effectively filter out common noise and improve signal integrity.

Nominal Supply Voltage / Vsup (V): 1.8

A low nominal supply voltage supports battery-operated devices and reduces overall power consumption.

Power Supplies (V): 1.8/5

Dual voltage capability makes this op-amp versatile for various applications, depending on the system requirements.

Number of Terminals: 8

The 8-terminal configuration facilitates multiple connection options, enhancing flexibility in circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package is ideal for space-constrained applications, allowing for denser circuitry.

Minimum Slew Rate: 0.2 V/us

The minimum slew rate, while limited, is adequate for many low-speed applications, ensuring stability in control circuits.

Maximum Supply Voltage Limit: 6 V

The maximum supply voltage limit makes it suitable for a range of applications while ensuring device safety.

Maximum Operating Temperature: 125 °C

A high operating temperature limit allows the op-amp to be used in automotive and industrial applications where extreme conditions may be encountered.

Maximum Bias Current (IIB) @25 °C: 0.00001 uA

Extremely low bias current at 25 °C enhances precision, making it a great choice for high-accuracy applications.

Frequency Compensation: YES

Frequency compensation improves stability and performance in feedback applications, ensuring reliable operation.

Minimum Voltage Gain: 10000

With a high voltage gain, this op-amp is able to amplify weak signals effectively, making it ideal for sensor applications.

Minimum Operating Temperature: -40 °C

The capability to operate in temperatures as low as -40 °C enhances the component's reliability for outdoor and harsh environment applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

This terminal finish ensures excellent solderability and corrosion resistance, contributing to longer component lifespan.

Terminal Position: DUAL

With dual terminal positioning, this op-amp is easy to integrate into various circuit configurations and layouts.

Maximum Seated Height: 1.75 mm

A low seated height supports compact design requirements, allowing for tighter assembly without sacrificing performance.

Width: 3.9 mm

The narrow width facilitates compact PCB design, making it more suitable for high-density applications.

Micropower: YES

Being micropower, this device consumes minimal energy, ideal for battery-powered and energy-efficient designs.

Maximum Time At Peak Reflow Temperature (s): 30

The tolerance for a maximum time at peak reflow supports efficient manufacturing processes, ensuring reliable solder joints.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C is suitable for standard soldering processes, enhancing manufacturability.

Length: 4.9 mm

The compact length supports space-constrained designs while maintaining robust performance.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this op-amp meets stringent automotive standards, ensuring reliability in critical systems.

Low-Bias: YES

The low-bias characteristic allows for accurate signal processing, making it suitable for high-performance applications.

Nominal Unity Gain Bandwidth: 790 kHz

A nominal unity gain bandwidth of 790 kHz supports a wide range of frequencies, enhancing versatility in applications.

Technology: CMOS

CMOS technology enables low power consumption and is ideal for integrated circuit applications.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy handling and soldering in automated processes.

Amplifier Type: OPERATIONAL AMPLIFIER

As a core electronic component, operational amplifiers are essential for signal amplification and conditioning across multiple applications.

Maximum Supply Current: 0.124 mA

With a low maximum supply current, this op-amp is perfect for low-power battery-operated devices, extending their operational life.

Architecture: VOLTAGE-FEEDBACK

The voltage-feedback architecture is suitable for a wide variety of applications, including signal conditioning and filtering.

Packing Method: TUBE

The tube packing method is conducive to easy handling and efficient storage during manufacturing and assembly processes.

Nominal Slow Rate: 0.27 V/us

With a nominal slow rate, this op-amp can perform well in applications where gradual changes are expected, ensuring smooth signal transitions.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch is compatible with many PCB layouts, simplifying integration into existing designs.

Technical Specifications

Operational Amplifiers (Op Amps) TSV632ID attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

1.8/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

790 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

74 dB

Input Offset Voltage Limit:

4500 uV

Minimum Voltage Gain:

10000

Minimum Slew Rate:

0.2 V/us

Nominal Slew Rate:

0.27 V/us

Peak Bias Current:

100 pA

Maximum Bias Current (IIB) @25 °C:

10 pA

Operational Characteristics

Nominal Supply Voltage:

1.8 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

124 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel/Palladium/Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TSV632ID Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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