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TSM103AIDT

STMicroelectronics

TSM103AIDT by STMicroelectronics

TSM103AIDT from STMicroelectronics is a dual operational amplifier with a max input offset voltage of 3000 µV and a nominal voltage of 5 V. It features an impressive common mode reject ratio of 85 dB, making it ideal for precision applications. This compact op-amp operates efficiently in industrial environments, supporting temperatures from -40 °C to 105 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Vyrian

USA . 5,059 parts In-Stock

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Digiode

USA . 3,073 parts In-Stock

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Pride Electronics

USA . 2,500 parts In-Stock

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Anansix

USA . 2,021 parts In-Stock

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Connector Distribution Corp

USA . 1,422 parts In-Stock

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Right Parts Inc.

USA . 1,422 parts In-Stock

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Cyclops Electronics Ltd

UK . 483 parts In-Stock

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IDEA Electronic Components Group

UK . 1,034 parts In-Stock

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$4.666

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$4.200

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$4.666

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Microchip USA

USA . 179 parts In-Stock

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$7.379

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MKK Technologies

India . 959 parts In-Stock

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$8.775

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$8.775

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DigiPath Technology Company

USA . 959 parts In-Stock

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$8.775

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959

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AZTECH Wire

Italy . 251 parts In-Stock

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$17.810

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A-Z Elektronik GmbH

Germany . 6,311 parts In-Stock

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Corphita

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Kepictronics

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Vigor

Singapore . 2,500 parts In-Stock

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Assy Fe

Spain . 1,428 parts In-Stock

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Parana Technologies

USA . 747 parts In-Stock

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$5.579

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Overview

Unlock unparalleled precision in your designs with the TSM103AIDT operational amplifier from STMicroelectronics—a leader in innovative semiconductor solutions. With exceptional performance characteristics, including low offset voltage and minimal bias current, this Op Amp ensures reliability across various applications, from industrial automation to consumer electronics. Experience enhanced efficiency and superior signal integrity, making it the ideal choice for engineers seeking quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures reliability and durability, making the operational amplifier suitable for various applications.

Maximum Input Offset Voltage: 3000 uV

A low input offset voltage enhances precision in applications requiring accurate signal amplification.

Maximum Average Bias Current (IIB): 0.2 uA

This low bias current minimizes errors and improves the overall accuracy of the amplifier.

Surface Mount: YES

Surface mount technology allows for efficient space utilization and automated assembly processes.

No. of Functions: 2

Dual functions provide versatility, allowing for multiple applications within a single chip.

Package Shape: RECTANGULAR

The rectangular shape facilitates better PCB layout and integration into various designs.

Nominal Common Mode Reject Ratio: 85 dB

A high CMRR ensures that the amplifier can effectively reject common-mode signals, enhancing signal integrity.

Nominal Supply Voltage / Vsup: 5 V

5V supply voltage is typical for many electronic applications, making it easy to integrate.

Power Supplies (V): ±1.5/±16/3/32

Flexible power supply options allow operation in different environments and circuit requirements.

No. of Terminals: 8

Eight terminals provide sufficient connectivity for various configurations while maintaining a compact design.

Package Style (Meter): SMALL OUTLINE

Small outline packages are suitable for space-constrained applications, enhancing design flexibility.

Minimum Slew Rate: 0.2 V/us

A minimum slew rate enables the amplifier to respond adequately to rapid signal changes, suitable for dynamic applications.

Maximum Supply Voltage Limit: 36 V

A high supply voltage limit allows for flexibility in design, accommodating a wide range of applications.

Maximum Operating Temperature: 105 °C

Operational stability at high temperatures makes this amplifier suitable for industrial and harsh environments.

Maximum Bias Current (IIB) @25 °C: 0.15 uA

Minimized bias current at standard temperature ensures precision and low distortion in signal processing.

Frequency Compensation: YES

Built-in frequency compensation enhances stability across a wide range of frequencies, improving performance.

Minimum Voltage Gain: 25000

A high voltage gain allows for effective amplification of weak signals, making it ideal for sensitive applications.

Minimum Operating Temperature: -40 °C

Low temperature operation ensures reliability in extreme environments, suitable for industrial applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality finish improves solderability and protects against corrosion, enhancing component longevity.

Terminal Position: DUAL

Dual terminal positioning facilitates better integration into circuit designs with optimized layout options.

Maximum Seated Height: 1.75 mm

A low seated height contributes to a compact design, making it suitable for small form factor projects.

Width: 3.9 mm

Compact width allows for greater design flexibility and efficient use of PCB space.

Maximum Time At Peak Reflow Temperature: 40 s

Allows for robust soldering processes while minimizing potential thermal damage to the chip.

Peak Reflow Temperature: 260 °C

High peak reflow temperature compatibility ensures that the device can withstand standard assembly processes.

Length: 4.9 mm

Short length aids in saving PCB space and allows for more dense circuit layouts.

Temperature Grade: INDUSTRIAL

Rated for industrial temperature ranges, ensuring performance in demanding environmental conditions.

Maximum Negative Supply Voltage Limit: 0 V

Prevents potential damage in circuits where negative voltages are not applicable, ensuring operational safety.

Nominal Unity Gain Bandwidth: 900 kHz

A high unity gain bandwidth indicates that the amplifier can handle a wide range of frequencies with good performance.

Technology: BIPOLAR

Bipolar technology provides high speed and low noise, which are ideal for precision amplification applications.

Terminal Form: GULL WING

Gull wing terminals allow for easy mounting and reflow soldering, improving assembly efficiency.

Amplifier Type: OPERATIONAL AMPLIFIER

Operational amplifiers are versatile components essential for a range of analog signal processing applications.

Maximum Supply Current: 2 mA

Low supply current results in lesser heat generation and power consumption, making it energy-efficient.

Nominal Negative Supply Voltage (Vsup): 0 V

Setting a nominal negative supply voltage of 0V simplifies design considerations for many applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture is widely utilized for its stability and versatility in signal amplification.

Packing Method: TAPE AND REEL

Tape and reel packaging is optimized for automated assembly, ensuring efficient and high-volume production.

Nominal Slew Rate: 0.4 V/us

A nominal slew rate of 0.4 V/us indicates the ability to handle moderate-speed signals effectively.

Terminal Pitch: 1.27 mm

The standard terminal pitch allows for compatibility with various PCB designs and assembly processes.

Technical Specifications

Operational Amplifiers (Op Amps) TSM103AIDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±16/3/32 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

900 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

25000

Minimum Slew Rate:

0.2 V/us

Nominal Slew Rate:

0.4 V/us

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

150 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

36 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

2 mA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TSM103AIDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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