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TS9224IYDT

STMicroelectronics

TS9224IYDT by STMicroelectronics

TS9224IYDT from STMicroelectronics is a low-offset operational amplifier ideal for automotive applications. It features a max input offset voltage of 900 µV, a nominal voltage of 3V, and operates within -40 °C to 125°C. This versatile op-amp supports multiple functions with high precision and reliability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,435 parts In-Stock

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6,435

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Digiode

USA . 789 parts In-Stock

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789

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Anansix

USA . 418 parts In-Stock

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418

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Distributors (Availability)

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Vigor

Singapore . 4,701 parts In-Stock

1+ parts

$2.170

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-

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4,701

$2.170

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IDEA Electronic Components Group

UK . 561 parts In-Stock

1+ parts

$6.676

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$6.009

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561

$6.676

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$6.009

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MKK Technologies

India . 1,985 parts In-Stock

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$12.555

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1,985

$12.555

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DigiPath Technology Company

USA . 1,985 parts In-Stock

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$12.555

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1,985

$12.555

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AZTECH Wire

Italy . 1,078 parts In-Stock

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$13.290

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$13.290

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QUARKTWIN TECHNOLOGY LTD

USA . 9,153 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,483 parts In-Stock

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Microchip USA

USA . 5,233 parts In-Stock

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Perfect Parts

USA . 4,892 parts In-Stock

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Corphita

USA . 4,462 parts In-Stock

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Parana Technologies

USA . 1,460 parts In-Stock

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$7.983

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$7.983

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Kepictronics

USA . 1,000 parts In-Stock

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Metaverse IC Inc.

Canada . 1,000 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Experience exceptional performance with the TS9224IYDT from STMicroelectronics, a leading provider of high-quality semiconductor solutions. This versatile operational amplifier offers unparalleled low offset and bias current, ensuring precision in automotive and industrial applications. With its robust design, AEC-Q100 screening, and impressive temperature range, the TS9224IYDT guarantees reliability and efficiency, empowering your projects to reach new heights. Elevate your designs with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy construction provides durability and protection from environmental factors, making it suitable for various applications.

Maximum Input Offset Voltage: 900 uV

Low input offset voltage ensures high accuracy in signal processing, which is critical for precision applications.

Maximum Average Bias Current (IIB): 0.055 uA

Ultra-low bias current contributes to minimized signal distortion and improved overall performance of the amplifier.

Surface Mount: YES

Surface mount capability allows for compact circuit designs, enhancing space efficiency and integration in modern electronics.

No. of Functions: 4

Multiple functions in a single package increase versatility and reduce component count, lowering overall system complexity.

Screening Level: AEC-Q100

Compliance with AEC-Q100 ensures reliability and performance under automotive conditions, making it ideal for automotive applications.

Package Shape: RECTANGULAR

The rectangular shape promotes orderly PCB layout and efficient use of space.

Nominal Common Mode Reject Ratio: 85 dB

High CMRR improves rejection of common-mode signals, enhancing precision in differential applications.

Nominal Supply Voltage / Vsup (V): 3

Power efficiency is optimized at a nominal supply of 3V, making it suitable for battery-operated devices.

Power Supplies (V): 3/5

Flexible power supply requirements allow for use in a wide range of circuits and configurations.

No. of Terminals: 14

The adequate number of terminals provides comprehensive connectivity options for versatile circuit applications.

Maximum Input Offset Current (IIO): 0.03 uA

Very low input offset current enhances accuracy and stability in sensitive applications.

Package Style (Meter): SMALL OUTLINE

Small outline packaging supports space-saving designs, ideal for compact electronic devices.

Minimum Slew Rate: 0.7 V/us

A minimum slew rate of 0.7 V/us allows for decent response speeds in various applications without distortion.

Maximum Supply Voltage Limit: 14 V

A high maximum supply voltage increases flexibility and performance in demanding applications.

Maximum Operating Temperature: 125 °C

High operating temperature tolerance makes it suitable for challenging environments, including automotive and industrial applications.

Maximum Bias Current (IIB) @25°C: 0.055 uA

Consistent low bias current across temperatures ensures reliability and accuracy in various operating conditions.

Minimum Voltage Gain: 3000

High voltage gain capability is ideal for amplifying weak signals effectively in demanding applications.

Minimum Operating Temperature: -40 °C

Wide temperature range suitability ensures functionality in extreme environments, vital for automotive and outdoor applications.

Terminal Position: DUAL

Dual terminal positioning promotes ease of integration into multi-function devices and layouts.

Low-Offset: YES

Low-offset characteristics secure high fidelity and precision signal amplification, critical for sensitive applications.

Maximum Seated Height: 1.75 mm

Compact height enables integration into low-profile designs while maintaining reliability.

Width: 3.9 mm

Narrow width allows for tight spacing in PCB layouts, facilitating dense designs.

Length: 8.65 mm

The compact length contributes to efficient use of board space and effective component arrangement.

Temperature Grade: AUTOMOTIVE

Designed for automotive environments, ensuring robustness and reliability in transportation systems.

Nominal Unity Gain Bandwidth: 4000 kHz

High bandwidth supports a wide range of applications, including high-frequency signal processing.

Minimum Common Mode Reject Ratio: 65 dB

A minimum CMRR allows for effective noise rejection, enhancing signal integrity in various conditions.

Technology: BICMOS

BICMOS technology combines advantages of bipolar and CMOS transistors, offering high performance and low power consumption.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and assembly, promoting efficiency in manufacturing processes.

Amplifier Type: OPERATIONAL AMPLIFIER

As a general-purpose operational amplifier, it's suitable for a wide range of applications, enhancing design flexibility.

Maximum Supply Current: 5.2 mA

The low supply current ensures energy efficiency, making it a great choice for battery-operated devices.

Architecture: VOLTAGE-FEEDBACK

Voltage feedback architecture enhances stability and linearity in amplification, making it suitable for precision tasks.

Packing Method: TR; TUBE

Tube packing aids in safe transportation and handling of components, reducing the risk of damage.

Nominal Slow Rate: 1.3 V/us

A nominal slow rate ensures smooth response in applications requiring gradual signal changes.

Terminal Pitch: 1.27 mm

Standard terminal pitch allows for compatibility with a wide range of PCB designs and manufacturing processes.

Technical Specifications

Operational Amplifiers (Op Amps) TS9224IYDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

No

Low-Bias:

No

Low-Offset:

Yes

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

4 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Minimum Common Mode Rejection Ratio (CMRR ):

65 dB

Input Offset Voltage Limit:

900 uV

Minimum Voltage Gain:

3000

Minimum Slew Rate:

0.7 V/us

Nominal Slew Rate:

1.3 V/us

Maximum Input Offset Current (IIO):

30 nA

Peak Bias Current:

55 nA

Maximum Bias Current (IIB) @25 °C:

55 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

14 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

5.2 mA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G14

Packaging and Shipping

Packing Method:

Tape And Reel, Tube

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TS9224IYDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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