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TS902BIN

STMicroelectronics

TS902BIN by STMicroelectronics

STMicroelectronics' TS902BIN is a CMOS Operational Amplifier with 2 functions, offering low bias current of 0.00015 uA. With a unity gain bandwidth of 1000 kHz, it operates in industrial temperature range from -40 to 105 °C. Ideal for applications requiring micropower consumption and precise voltage feedback amplification.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,090 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,090

-

-

-

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Anansix

USA . 1,202 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,202

-

-

-

-

ECAB

Sweden . 775 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

775

-

-

-

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Digiode

USA . 395 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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395

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,312 parts In-Stock

1+ parts

$4.832

100+ parts

-

1k+ parts

$4.349

10k+ parts

-

1,312

$4.832

-

$4.349

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Semicontronic

India . 1,444 parts In-Stock

1+ parts

$8.410

100+ parts

$8.200

1k+ parts

$8.158

10k+ parts

-

1,444

$8.410

$8.200

$8.158

-

MKK Technologies

India . 1,764 parts In-Stock

1+ parts

$9.086

100+ parts

-

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-

10k+ parts

-

1,764

$9.086

-

-

-

DigiPath Technology Company

USA . 1,764 parts In-Stock

1+ parts

$9.086

100+ parts

-

1k+ parts

-

10k+ parts

-

1,764

$9.086

-

-

-

Corphita

USA . 2,721 parts In-Stock

1+ parts

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100+ parts

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2,721

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Parana Technologies

USA . 2,352 parts In-Stock

1+ parts

-

100+ parts

$5.777

1k+ parts

-

10k+ parts

-

2,352

-

$5.777

-

-

Overview

Experience unparalleled performance and reliability with the TS902BIN operational amplifier from STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-notch quality and cutting-edge technology in every product. The TS902BIN is perfect for a wide range of applications due to its versatile design and exceptional features. Customers can expect superior value, efficiency, and precision with this amplifier, making it the ideal choice for any project. Elevate your designs with the TS902BIN and enjoy the benefits of high performance and innovation at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and reduces the risk of electrical interference, making the product reliable for various applications.

Maximum Input Offset Voltage: 1500 uV

Low input offset voltage ensures accurate amplification and signal processing, making the product suitable for precision measurement and control applications.

Maximum Average Bias Current (IIB): 0.00015 uA

Low bias current minimizes power consumption and ensures stability in the amplification process, making the product energy-efficient.

Nominal Common Mode Reject Ratio: 85 dB

High common mode rejection ratio indicates the ability to reject unwanted signals and noise, resulting in a cleaner output signal for precise amplification.

Nominal Supply Voltage / Vsup (V): 10

The nominal supply voltage of 10V provides a suitable operating range for various electronic systems, making the product versatile in different applications.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, improving the overall efficiency and performance of the operational amplifier.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is designed for high gain, high input impedance, and differential input, making it ideal for amplification and signal processing tasks.

Technical Specifications

Operational Amplifiers (Op Amps) TS902BIN attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

1500 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

1 V/us

Peak Bias Current:

150 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

10 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

105 °C (221 °F)

Maximum Supply Current:

900 μA

Physical Characteristics

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.201 in (5.1 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP14,.3

Trade Compliance

TS902BIN Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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