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TS902AIN

STMicroelectronics

TS902AIN by STMicroelectronics

TS902AIN by STMicroelectronics is a CMOS Operational Amplifier with 2 functions, 7000 uV Max Input Offset Voltage, and 60 dB Common Mode Reject Ratio. Ideal for automotive applications due to its low-bias micropower design and voltage-feedback architecture.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,841 parts In-Stock

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3,841

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Vyrian

USA . 1,540 parts In-Stock

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1,540

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Anansix

USA . 1,501 parts In-Stock

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1,501

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ECAB

Sweden . 725 parts In-Stock

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725

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 898 parts In-Stock

1+ parts

$0.926

100+ parts

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$0.834

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898

$0.926

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$0.834

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MKK Technologies

India . 1,593 parts In-Stock

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$1.742

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1,593

$1.742

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DigiPath Technology Company

USA . 1,593 parts In-Stock

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$1.742

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1,593

$1.742

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Corphita

USA . 4,005 parts In-Stock

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4,005

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Parana Technologies

USA . 112 parts In-Stock

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$1.108

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112

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$1.108

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Overview

Discover the TS902AIN by STMicroelectronics, a high-quality Operational Amplifier designed for various applications. With a reputation for excellence, STMicroelectronics delivers unmatched performance and reliability in their products. The TS902AIN offers customers exceptional value with its low bias current, micropower technology, and wide temperature range. Ideal for automotive use, this amplifier boasts a unity gain bandwidth of 700 kHz and a nominal common mode reject ratio of 60 dB, making it perfect for a range of projects. Experience the difference with the TS902AIN and elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for various applications without adding unnecessary weight.

Maximum Input Offset Voltage: 7000 uV

The low input offset voltage ensures accurate and precise signal processing, making this op amp reliable for sensitive operations.

Maximum Average Bias Current (IIB): 0.0003 uA

The low bias current helps in reducing power consumption and ensures minimal signal distortion in the circuit.

Nominal Common Mode Reject Ratio: 60 dB

This high rejection ratio ensures that common-mode signals are efficiently minimized, leading to a cleaner output signal.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V makes it compatible with a wide range of systems, allowing for versatile applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is designed for high gain and differential input making it suitable for various signal processing applications.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this op amp can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Technology: CMOS

The use of CMOS technology offers low power consumption, high input impedance, and high gain bandwidth, making this op amp energy-efficient and high-performing.

Technical Specifications

Operational Amplifiers (Op Amps) TS902AIN attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/16 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

700 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

0.5 V/us

Peak Bias Current:

300 pA

Maximum Bias Current (IIB) @25 °C:

150 pA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

1.4 mA

Physical Characteristics

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.201 in (5.1 mm)

Total Terminals:

14

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e0

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP14,.3

Trade Compliance

TS902AIN Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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