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TPD270B18

STMicroelectronics

TPD270B18 by STMicroelectronics

STMicroelectronics TPD270B18 is a Breakover Diode with 243V Reverse Voltage, 70 °C Max Temp, and 180mA Holding Current. It has a Breakdown Voltage of 325V and Tin/Lead Terminal Finish. Ideal for applications requiring reliable voltage regulation in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,631 parts In-Stock

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4,631

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Anansix

USA . 1,981 parts In-Stock

1+ parts

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1,981

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Digiode

USA . 326 parts In-Stock

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326

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,253 parts In-Stock

1+ parts

$2.798

100+ parts

-

1k+ parts

$2.518

10k+ parts

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2,253

$2.798

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$2.518

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MKK Technologies

India . 1,714 parts In-Stock

1+ parts

$5.261

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1,714

$5.261

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DigiPath Technology Company

USA . 1,714 parts In-Stock

1+ parts

$5.261

100+ parts

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1,714

$5.261

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Corphita

USA . 2,201 parts In-Stock

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2,201

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Parana Technologies

USA . 894 parts In-Stock

1+ parts

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100+ parts

$3.345

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894

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$3.345

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Overview

Unlock the power of precision with the TPD270B18 Breakover Diode by STMicroelectronics. Known for their commitment to quality, STMicroelectronics delivers cutting-edge solutions for a wide range of applications. The TPD270B18 offers customers unparalleled value, providing reliable performance and peace of mind. Whether you're looking to enhance your electronic devices or improve circuit protection, this breakover diode is the perfect choice. Experience the advantages of STMicroelectronics with the TPD270B18 today.

Feature Benefit Bullets

Repetitive Peak Reverse Voltage: 243 V

Higher reverse voltage allows for more reliable and stable performance, ideal for applications requiring a high level of voltage protection.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this diode can withstand a wide range of environmental conditions, making it suitable for various applications.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures that this diode can function effectively in colder temperatures, increasing its versatility.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish enhances solderability and ensures a reliable electrical connection, contributing to the overall durability of the product.

Maximum Holding Current: 180 mA

The high holding current capability of this diode allows it to handle larger currents without failing, offering added protection to the circuit it is used in.

Maximum Breakdown Voltage: 325 V

A higher breakdown voltage means that this diode can effectively handle higher voltages, providing enhanced protection against voltage spikes and surges.

Technical Specifications

Breakover Diodes TPD270B18 attributes and parameters. Explore more Breakover Diodes devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

325 V

Maximum Holding Current:

180 mA

JESD-609 Code:

e0

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Repetitive Peak Reverse Voltage:

243 V

Sub-Category:

Breakover Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

TPD270B18 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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