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TPC160B12

STMicroelectronics

TPC160B12 by STMicroelectronics

STMicroelectronics TPC160B12 is a Breakover Diode with 144V Reverse Voltage, 70 °C Max Temp, and 193V Breakdown Voltage. Ideal for applications requiring a max Holding Current of 120mA.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,435 parts In-Stock

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2,435

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Vyrian

USA . 1,230 parts In-Stock

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1,230

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Anansix

USA . 978 parts In-Stock

1+ parts

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978

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,305 parts In-Stock

1+ parts

$3.956

100+ parts

-

1k+ parts

$3.560

10k+ parts

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1,305

$3.956

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$3.560

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MKK Technologies

India . 52 parts In-Stock

1+ parts

$7.439

100+ parts

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52

$7.439

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DigiPath Technology Company

USA . 52 parts In-Stock

1+ parts

$7.439

100+ parts

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52

$7.439

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Corphita

USA . 2,395 parts In-Stock

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2,395

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Parana Technologies

USA . 1,365 parts In-Stock

1+ parts

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100+ parts

$4.730

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1,365

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$4.730

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Overview

Unleash the power of innovation with the TPC160B12 Breakover Diode by STMicroelectronics. Known for their top-notch quality and reliability, STMicroelectronics delivers cutting-edge solutions for a wide range of applications. From automotive electronics to industrial control systems, this diode provides superior performance and protection. Trust in STMicroelectronics to provide you with the value and benefits you need to elevate your projects to new heights. Choose the TPC160B12 for unmatched quality and peace of mind.

Feature Benefit Bullets

Repetitive Peak Reverse Voltage: 144 V

This high reverse voltage rating ensures reliable operation and protection against reverse voltage spikes, making this product suitable for various applications in different environments.

Maximum Operating Temperature: 70 °C

With a high operating temperature limit, this breakover diode can withstand elevated temperatures without compromising performance, allowing for reliable operation in demanding conditions.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures that this breakover diode can function effectively even in cold environments, providing versatility for a wide range of applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish offers good solderability and reliability, making it easier to integrate this breakover diode into electronic circuits during assembly.

Maximum Holding Current: 120 mA

The high holding current rating of 120 mA ensures stable operation under normal conditions, helping to prevent false triggering or unintended breakdown in the circuit.

Maximum Breakdown Voltage: 193 V

The high breakdown voltage capacity of 193 V provides additional protection against voltage surges and overloads, enhancing the overall reliability and safety of the circuit.

Technical Specifications

Breakover Diodes TPC160B12 attributes and parameters. Explore more Breakover Diodes devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

193 V

Maximum Holding Current:

120 mA

JESD-609 Code:

e0

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Repetitive Peak Reverse Voltage:

144 V

Sub-Category:

Breakover Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

TPC160B12 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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