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TPC240B12

STMicroelectronics

TPC240B12 by STMicroelectronics

STMicroelectronics TPC240B12 is a Breakover Diode with 216V Repetitive Peak Reverse Voltage, 70 °C Max Operating Temp, and 289V Max Breakdown Voltage. Ideal for applications requiring reliable protection against voltage spikes in circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,920 parts In-Stock

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Vyrian

USA . 1,115 parts In-Stock

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1,115

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Anansix

USA . 773 parts In-Stock

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773

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,260 parts In-Stock

1+ parts

$4.433

100+ parts

-

1k+ parts

$3.990

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2,260

$4.433

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$3.990

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MKK Technologies

India . 103 parts In-Stock

1+ parts

$8.337

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103

$8.337

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DigiPath Technology Company

USA . 103 parts In-Stock

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$8.337

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103

$8.337

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Corphita

USA . 4,256 parts In-Stock

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4,256

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Parana Technologies

USA . 945 parts In-Stock

1+ parts

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$5.301

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945

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$5.301

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Overview

Discover the exceptional quality and reliability of the TPC240B12 Breakover Diode by STMicroelectronics. With a high Repetitive Peak Reverse Voltage of 216V and a Maximum Breakdown Voltage of 289V, this diode is perfect for a wide range of applications. From surge protection to voltage regulation, this versatile component offers unparalleled performance and efficiency. Trust in STMicroelectronics' renowned expertise in semiconductor manufacturing to deliver a product that exceeds expectations. Upgrade your electronic projects with the TPC240B12 and experience the superior value and benefits it brings to your designs.

Feature Benefit Bullets

Repetitive Peak Reverse Voltage: 216 V

This high reverse voltage rating allows the diode to handle large reverse voltages, making it suitable for a wide range of applications where overvoltage protection is needed.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this diode can withstand high temperatures, ensuring reliable performance even in demanding environments.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C ensures that this diode can be used in cold temperature applications without any issues.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and ensures a reliable electrical connection, making it easy to integrate this diode into various circuits.

Maximum Holding Current: 120 mA

With a maximum holding current of 120mA, this diode can handle surges in current without failing, making it suitable for high-power applications.

Maximum Breakdown Voltage: 289 V

The high breakdown voltage of 289V ensures that this diode can handle significant voltage spikes, providing robust protection to the circuit it is used in.

Technical Specifications

Breakover Diodes TPC240B12 attributes and parameters. Explore more Breakover Diodes devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

289 V

Maximum Holding Current:

120 mA

JESD-609 Code:

e0

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Repetitive Peak Reverse Voltage:

216 V

Sub-Category:

Breakover Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

TPC240B12 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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