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TN815-800H

STMicroelectronics

TN815-800H by STMicroelectronics

TN815-800H by STMicroelectronics is a single SCR with a max repetitive peak reverse voltage of 800 V and non-repetitive peak on-state current of 73 A. It operates efficiently in temperatures from -40 °C to 125°C, making it ideal for power control applications. With a compact through-hole design, it ensures reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 11,067 parts In-Stock

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11,067

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Digiode

USA . 2,260 parts In-Stock

1+ parts

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2,260

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Anansix

USA . 1,698 parts In-Stock

1+ parts

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1,698

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,336 parts In-Stock

1+ parts

$4.548

100+ parts

-

1k+ parts

$4.094

10k+ parts

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2,336

$4.548

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$4.094

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MKK Technologies

India . 1,130 parts In-Stock

1+ parts

$8.553

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1,130

$8.553

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DigiPath Technology Company

USA . 1,130 parts In-Stock

1+ parts

$8.553

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1,130

$8.553

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AZTECH Wire

Italy . 708 parts In-Stock

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$16.950

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708

$16.950

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Parana Technologies

USA . 2,237 parts In-Stock

1+ parts

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100+ parts

$5.438

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2,237

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$5.438

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Corphita

USA . 221 parts In-Stock

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221

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Overview

Unlock unparalleled efficiency and reliability with the TN815-800H from STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance Silicon Controlled Rectifier excels in diverse applications, from industrial control to renewable energy systems, delivering robust performance under extreme conditions. With exceptional voltage capabilities and thermal resilience, it ensures longevity and peace of mind for your projects—maximizing value while minimizing downtime. Experience the STMicroelectronics advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and resistance to environmental stress, making the product suitable for various applications.

Maximum DC Gate Trigger Current: 15 mA

A relatively low gate trigger current makes the device energy-efficient and compatible with various triggering circuits.

Configuration: SINGLE

The single configuration simplifies circuit designs, ideal for applications requiring straightforward control.

Non Repetitive Peak On-state Current: 73 A

This high peak current capability enables the device to handle transient loads effectively, useful in power applications.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design, allowing for efficient use of space in electronic layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer robust mechanical strength and are suitable for easy soldering onto PCBs.

Maximum On-state Current: 5 A

A moderate on-state current rating enables the SCR to be used in various control applications efficiently.

Maximum Leakage Current: 2 mA

Low leakage current translates to reduced energy losses, enhancing the product’s overall efficiency.

Repetitive Peak Reverse Voltage: 800 V

The ability to withstand high reverse voltages ensures reliability in high-voltage applications.

No. of Terminals: 3

The three-terminal design is standard for SCRs, providing easy integration into existing circuit designs.

Package Style (Meter): IN-LINE

An in-line package style optimizes space and heat dissipation, making it excellent for dense electronic assemblies.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows the SCR to perform in demanding thermal environments.

Trigger Device Type: SCR

As an SCR, this device provides excellent control for switching applications, making it a versatile choice.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures the device can operate reliably in extreme environments.

Terminal Finish: TIN

Tin plating enhances corrosion resistance and ensures better solderability, increasing reliability in applications.

Terminal Position: SINGLE

Single terminal position simplifies layout and design, making it user-friendly for circuit integrations.

Maximum RMS On-state Current: 8 A

With an 8 A RMS rating, this device can efficiently control and switch larger loads.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage reduces overall power requirements, contributing to energy savings in applications.

Case Connection: ANODE

Anode connection simplifies the circuit design and facilitates easy integration with power systems.

Repetitive Peak Off-state Voltage: 800 V

Supports high off-state voltages, ensuring the SCR can handle demanding applications without failure.

Minimum Critical Rate of Rise of Off-state Voltage: 150 V/us

A high rate of rise of off-state voltage supports fast switching applications, enhancing performance.

Maximum Holding Current: 40 mA

The ability to maintain a holding current of 40 mA ensures stable performance during low power states.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN815-800H attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

150 V/us

Maximum DC Gate Trigger Current:

15 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

73 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN815-800H Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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