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TMMBAT42

STMicroelectronics

TMMBAT42 by STMicroelectronics

TMMBAT42 by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.65V and output current of 0.2A. It has a fast reverse recovery time of 0.005us, making it suitable for applications requiring high-speed switching such as power supplies and voltage clamping circuits. The diode operates in temperatures ranging from -65 °C to 125°C and can handle repetitive peak reverse voltages up to 30V.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ECAB

Sweden . 54,800 parts In-Stock

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54,800

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Vectronix, Inc

USA . 23,692 parts In-Stock

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23,692

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ComSIT Distribution GmbH

Germany . 6,835 parts In-Stock

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6,835

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Whistler Technology

UK . 4,556 parts In-Stock

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4,556

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J2 Sourcing AB

Sweden . 3,000 parts In-Stock

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3,000

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Anansix

USA . 2,120 parts In-Stock

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Digiode

USA . 1,951 parts In-Stock

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Pegasus Components GmbH

Germany . 1,500 parts In-Stock

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Vyrian

USA . 291 parts In-Stock

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291

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Fibra_Brandt Electronic GMBH

Germany . 290 parts In-Stock

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290

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 903 parts In-Stock

1+ parts

$0.040

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$0.036

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903

$0.040

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$0.036

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MKK Technologies

India . 177 parts In-Stock

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$0.074

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177

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DigiPath Technology Company

USA . 177 parts In-Stock

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$0.074

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Perfect Parts

USA . 232,417 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,155 parts In-Stock

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Assy Fe

Spain . 2,500 parts In-Stock

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Corphita

USA . 1,382 parts In-Stock

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Parana Technologies

USA . 219 parts In-Stock

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$0.047

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219

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Overview

Discover the TMMBAT42 by STMicroelectronics, a high-quality Schottky rectifier diode that offers outstanding performance and reliability. With a maximum forward voltage of only 0.65V and a maximum output current of 0.2A, this diode is perfect for a wide range of applications. From power supplies to battery charging circuits, the TMMBAT42 provides efficient power management while ensuring long-term durability. Trust in STMicroelectronics' expertise in semiconductor manufacturing to deliver a product that exceeds your expectations. Unlock the potential of your electronic designs with the TMMBAT42 today!

Feature Benefit Bullets

Package Body Material: GLASS

Glass package body provides excellent thermal conduction, allowing for efficient heat dissipation during operation.

Config: SINGLE

Single configuration simplifies design and installation, making this product easy to use.

Surface Mount: YES

Surface mount capability enables easy and secure mounting on circuit boards, saving space and facilitating automated assembly processes.

Maximum Reverse Recovery Time: 0.005 us

With a very low reverse recovery time, this diode ensures efficient and fast switching performance in circuit applications.

Maximum Reverse Current: 0.5 uA

Low reverse current helps in reducing power losses and improving overall efficiency of the circuit.

Package Shape: ROUND

Round package shape offers mechanical stability and ease of handling during installation.

No. of Terminals: 2

Two terminals simplify connection setup and ensure compatibility with standard circuit configurations.

Package Style (Meter): LONG FORM

Long form package style provides durability and protection for the diode while accommodating easy integration into the circuit.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable performance in various environmental conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the diode can function even in extreme cold environments.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides a reliable electrical connection and prevents oxidation, ensuring long-term stability of the diode.

Terminal Position: END

End terminal position facilitates easy connectivity and secure positioning within the circuit.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents electrical leakage, ensuring proper functionality.

Maximum Power Dissipation: 0.2 W

Low power dissipation helps in minimizing heat generation and ensures efficient energy usage in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time at peak temperature simplifies manufacturing processes and reduces production time.

Peak Reflow Temperature °C: 235

High peak reflow temperature capability allows for robust soldering and secure mounting on PCBs.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for rectifying AC to DC, making it ideal for power supply and conversion applications.

Maximum Forward Voltage (VF): 0.65 V

Low forward voltage drop ensures efficiency in converting AC to DC with minimal power losses.

Maximum Output Current: 0.2 A

High output current rating enables the diode to handle larger loads and provide stable power output.

Technology: SCHOTTKY

Schottky technology ensures fast switching speed and low forward voltage drop for high-performance applications.

Terminal Form: WRAP AROUND

Wrap around terminal form provides secure and reliable connection, reducing the risk of loose connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 30 V

High repetitive peak reverse voltage rating makes the diode suitable for various voltage rectification applications.

Maximum Non Repetitive Peak Forward Current: 4 A

High non-repetitive peak forward current capability allows the diode to handle short-term overloads without damage.

Diode Element Material: SILICON

Silicon diode element material provides good thermal conductivity and stable performance for reliable operation.

Technical Specifications

Diodes & Rectifiers TMMBAT42 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FAST SWITCHING

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

O-LELF-R2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.2 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.005 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

TMMBAT42 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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