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TMMBAT41

STMicroelectronics

TMMBAT41 by STMicroelectronics

TMMBAT41 by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 1V and output current of 0.1A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 235°C, and can handle up to 100V reverse voltage. Ideal for applications requiring low power dissipation in surface-mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Halfin

Belgium . 3,535 parts In-Stock

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3,535

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Pegasus Components GmbH

Germany . 3,499 parts In-Stock

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3,499

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Digiode

USA . 2,609 parts In-Stock

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2,609

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LIBRA Elektronik GmbH

Germany . 2,092 parts In-Stock

1+ parts

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2,092

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Fibra_Brandt Electronic GMBH

Germany . 2,000 parts In-Stock

1+ parts

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2,000

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Nova Conductors

Japan . 1,000 parts In-Stock

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1,000

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Vyrian

USA . 887 parts In-Stock

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887

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Anansix

USA . 784 parts In-Stock

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784

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ComSIT Distribution GmbH

Germany . 767 parts In-Stock

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767

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GES GmbH

Germany . 386 parts In-Stock

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386

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 134 parts In-Stock

1+ parts

$0.118

100+ parts

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134

$0.118

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IDEA Electronic Components Group

UK . 922 parts In-Stock

1+ parts

$0.140

100+ parts

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$0.126

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922

$0.140

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$0.126

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Aztec Data Supply Inc.

USA . 21,781 parts In-Stock

1+ parts

$0.155

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21,781

$0.155

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MKK Technologies

India . 1,835 parts In-Stock

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$0.263

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1,835

$0.263

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DigiPath Technology Company

USA . 1,835 parts In-Stock

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$0.263

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1,835

$0.263

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Ampacity Inc.

Singapore . 1,298 parts In-Stock

1+ parts

$1.010

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$1.010

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AZTECH Wire

Italy . 887 parts In-Stock

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$9.608

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887

$9.608

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Continental Prestige Electronics

USA . 6,192 parts In-Stock

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Perfect Parts

USA . 5,600 parts In-Stock

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Corphita

USA . 2,730 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,500 parts In-Stock

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2,500

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Argo Parts USA

USA . 825 parts In-Stock

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825

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Parana Technologies

USA . 784 parts In-Stock

1+ parts

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$0.167

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784

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$0.167

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Aranea Global

USA . 500 parts In-Stock

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500

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Assy Fe

Spain . 150 parts In-Stock

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150

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Overview

Discover the high-quality TMMBAT41 by STMicroelectronics, a Schottky rectifier diode that offers reliable performance in a variety of applications. With a maximum output current of 0.1A and a maximum repetitive peak reverse voltage of 100V, this diode is perfect for your project needs. Whether you're working on power supplies, battery chargers, or voltage converters, the TMMBAT41's matte tin finish and long-form package style ensure easy installation and superior conductivity. Trust in STMicroelectronics' reputation for excellence and choose the TMMBAT41 for unmatched value and efficiency in your designs.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material provides excellent protection for the diode, ensuring durability and reliability.

Config: SINGLE

Single configuration simplifies installation and operation of the diode.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration onto circuit boards.

Maximum Reverse Current: 0.1 uA

Low reverse current ensures minimal power loss and improved efficiency.

Package Shape: ROUND

Round shape makes it easy to handle and install in various applications.

No. of Terminals: 2

Having 2 terminals simplifies the connection process.

Package Style (Meter): LONG FORM

Long form package style provides additional protection and heat dissipation for the diode.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures reliability in various environmental conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the diode can function in cold environments.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and conductivity.

Terminal Position: END

End terminal position allows for easy connection.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents electrical interference.

Maximum Power Dissipation: 0.1 W

Low power dissipation helps in minimizing energy loss and heat generation.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature ensures the diode remains stable during soldering.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for quick and efficient soldering.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient conversion of AC to DC current.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop helps in reducing power losses in the circuit.

Maximum Output Current: 0.1 A

Sufficient output current for various electronic applications.

Technology: SCHOTTKY

Schottky technology provides fast switching and low forward voltage drop characteristics.

Terminal Form: WRAP AROUND

Wrap around terminal form ensures secure connection and mechanical stability.

Maximum Repetitive Peak Reverse Voltage: 100 V

High reverse voltage capability makes the diode suitable for various power applications.

Maximum Non Repetitive Peak Forward Current: 0.75 A

Capable of handling high peak forward currents for short durations.

Diode Element Material: SILICON

Silicon diode element material provides good electrical characteristics and temperature stability.

Technical Specifications

Diodes & Rectifiers TMMBAT41 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

O-LELF-R2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.1 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.1 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

.1 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

TMMBAT41 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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