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STW82100B

STMicroelectronics

STW82100B by STMicroelectronics

STW82100B by STMicroelectronics is a BICMOS technology DOWN CONVERTER with 44 terminals, operating b/w -40 to 85 °C. It supports RF input frequencies from 1850 MHz to 2400 MHz, with LO tunability and a characteristic impedance of 50 ohm. Ideal for RF/Microwave applications requiring surface mount packaging.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,772 parts In-Stock

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4,772

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Digiode

USA . 3,478 parts In-Stock

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3,478

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Anansix

USA . 1,692 parts In-Stock

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1,692

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,147 parts In-Stock

1+ parts

$1.042

100+ parts

-

1k+ parts

$0.938

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2,147

$1.042

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$0.938

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MKK Technologies

India . 343 parts In-Stock

1+ parts

$1.960

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343

$1.960

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DigiPath Technology Company

USA . 343 parts In-Stock

1+ parts

$1.960

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343

$1.960

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AZTECH Wire

Italy . 1,046 parts In-Stock

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$17.170

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1,046

$17.170

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QUARKTWIN TECHNOLOGY LTD

USA . 11,958 parts In-Stock

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11,958

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Corphita

USA . 3,236 parts In-Stock

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3,236

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Parana Technologies

USA . 810 parts In-Stock

1+ parts

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$1.246

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810

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$1.246

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Overview

Unleash the power of seamless connectivity with the STW82100B from STMicroelectronics. Designed with precision and expertise, this RF/Microwave Up/Down Converter offers unparalleled performance for a wide range of applications. Whether you're in need of high-quality signal conversion or reliable transmission capabilities, this component delivers exceptional value to customers. Trust in the reputation of STMicroelectronics for top-tier electronic solutions that elevate your projects to new heights. Embrace innovation and efficiency with the STW82100B, where quality meets reliability for all your RF and microwave needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic body material provides lightweight and durable construction, making it ideal for portable and rugged applications.

Power Supplies (V): 3.3,5

Offers flexibility in power supply options, allowing compatibility with various systems and environments.

No. of Terminals: 44

Multiple terminals provide versatile connectivity options, enabling integration with different setups and configurations.

Maximum Operating Temperature: 85 °C

High operating temperature range ensures reliable performance even in harsh environmental conditions.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in extreme cold conditions without compromising performance.

Terminal Finish: Matte Tin (Sn) - annealed

Matte Tin finish provides corrosion resistance and reliable electrical connections for long-term usability.

LO Tunable: YES

LO tunable capability enhances flexibility in frequency selection, allowing for precise signal processing and optimization.

Technology: BICMOS

BICMOS technology combines the benefits of bipolar and CMOS technologies, offering high performance and low power consumption.

RF or Microwave Device Type: DOWN CONVERTER

Down converter design allows for conversion of higher frequency signals to lower frequency signals, suitable for various communication and signal processing applications.

Minimum RF Input Frequency: 1850 MHz

Supports a wide range of RF input frequencies, making it compatible with diverse RF signal sources and applications.

Characteristic Impedance: 50 ohm

Standard 50 ohm impedance ensures compatibility with common RF systems and components, facilitating seamless integration.

Maximum RF Input Frequency: 2400 MHz

High maximum RF input frequency capability allows for processing of a wide range of RF signals with high fidelity and efficiency.

Mounting Feature: SURFACE MOUNT

Surface mount design simplifies installation and integration processes, saving time and effort during system assembly.

Technical Specifications

RF/Microwave Up/Down Converters STW82100B attributes and parameters. Explore more RF/Microwave Up/Down Converters devices from STMicroelectronics

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

JESD-609 Code:

e3

LO Tunable:

YES

Mounting Feature:

No. of Terminals:

44

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC44,.28SQ,20

Power Supplies (V):

3.3,5

Maximum RF Input Frequency:

2400 MHz

Minimum RF Input Frequency:

1850 MHz

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Up/Down Converters

Technology:

Terminal Finish:

Matte Tin (Sn) - annealed

Trade Compliance

STW82100B RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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