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STTH802CFP

STMicroelectronics

STTH802CFP by STMicroelectronics

STTH802CFP from STMicroelectronics is a common cathode rectifier diode with a max reverse recovery time of 0.02 µs and can handle up to 4 A output current. It operates efficiently at temperatures up to 175 °C, making it ideal for high-performance applications. Packaged in a flange mount design, it's perfect for space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,275 parts In-Stock

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Anansix

USA . 491 parts In-Stock

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491

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Digiode

USA . 221 parts In-Stock

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221

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IDEA Electronic Components Group

UK . 905 parts In-Stock

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$0.050

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$0.045

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905

$0.050

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$0.045

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MKK Technologies

India . 1,207 parts In-Stock

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$0.093

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$0.093

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DigiPath Technology Company

USA . 1,207 parts In-Stock

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$0.093

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1,207

$0.093

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AZTECH Wire

Italy . 88 parts In-Stock

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$13.020

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88

$13.020

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A-Z Elektronik GmbH

Germany . 6,408 parts In-Stock

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Parana Technologies

USA . 2,199 parts In-Stock

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$0.059

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2,199

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$0.059

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Corphita

USA . 977 parts In-Stock

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977

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Overview

Elevate your designs with the STTH802CFP from STMicroelectronics, a top-tier rectifier diode that ensures superior efficiency and reliability in various applications. Engineered for performance, this robust component thrives under demanding conditions with a high operating temperature and swift recovery time, making it ideal for power management solutions. Trust in STMicroelectronics’ legacy of excellence to deliver unmatched quality and durability, enhancing your projects while maximizing value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy in the package body ensures high resistance to environmental factors, contributing to the longevity and reliability of the diode.

Config: COMMON CATHODE, 2 ELEMENTS

A common cathode configuration allows for easy integration into circuits, simplifying the design process in applications where multiple diodes are used.

Maximum Reverse Recovery Time: 0.02 us

With a low reverse recovery time, this diode minimizes switching losses and enhances overall efficiency, making it ideal for high-speed applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, making it easier to fit into compact designs.

No. of Terminals: 3

Three terminals provide flexibility in circuit design, enabling versatile applications in various configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount design offers robust mechanical support, improving stability and thermal performance in demanding applications.

Application: EFFICIENCY

Designed for efficiency, this diode enhances the overall performance of power circuits, making it suitable for energy-sensitive applications.

Maximum Operating Temperature: 175 °C

High operating temperature capability ensures the diode can function in harsh environments without performance degradation.

Terminal Finish: MATTE TIN

The matte tin finish of terminals provides excellent solderability and corrosion resistance, ensuring reliable connections.

Terminal Position: SINGLE

A single terminal position simplifies assembly in circuits, reducing the likelihood of errors during installation.

Case Connection: ISOLATED

An isolated case connection enhances safety and prevents interference with other circuit components, promoting reliable operation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.95 V

A low maximum forward voltage drop helps reduce power loss during operation, contributing to higher efficiency in the circuit.

Maximum Output Current: 4 A

With a maximum output current of 4 A, this diode can handle substantial loads, making it suitable for various power applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical anchoring to the PCB, ensuring durability and stability under vibration.

No. of Elements: 2

Having two elements allows for enhanced functionality in rectification and improves overall performance in power circuits.

Maximum Repetitive Peak Reverse Voltage: 200 V

A high peak reverse voltage rating means the diode can handle significant voltage spikes, protecting your circuit from damage.

Maximum Non-Repetitive Peak Forward Current: 50 A

The capacity to handle peak forward currents of 50 A allows for transient load handling, providing reliable performance under variable conditions.

Diode Element Material: SILICON

Using silicon as the diode element material ensures high efficiency and effectiveness in both rectification and switching applications.

Technical Specifications

Diodes & Rectifiers STTH802CFP attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.02 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH802CFP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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