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STTH802CB

STMicroelectronics

STTH802CB by STMicroelectronics

STTH802CB by STMicroelectronics is a common cathode rectifier diode designed for efficiency, featuring a max reverse recovery time of 0.02 µs and handling up to 4 A output current. It operates at a peak temp of 175 °C and supports surface mount applications. Ideal for high-performance power management systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,848 parts In-Stock

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6,848

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ECAB

Sweden . 2,762 parts In-Stock

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2,762

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Zilex Electronics Inc.

Canada . 2,300 parts In-Stock

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2,300

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Digiode

USA . 1,591 parts In-Stock

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1,591

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Anansix

USA . 987 parts In-Stock

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987

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,823 parts In-Stock

1+ parts

$0.090

100+ parts

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$0.081

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1,823

$0.090

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$0.081

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MKK Technologies

India . 229 parts In-Stock

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$0.170

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229

$0.170

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DigiPath Technology Company

USA . 229 parts In-Stock

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$0.170

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229

$0.170

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AZTECH Wire

Italy . 921 parts In-Stock

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$20.520

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921

$20.520

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Corphita

USA . 2,883 parts In-Stock

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2,883

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Parana Technologies

USA . 2,183 parts In-Stock

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$0.108

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2,183

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$0.108

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Overview

Unlock unmatched performance with the STTH802CB from STMicroelectronics—the perfect choice for those seeking reliability in diodes and rectifiers. Renowned for superior quality, STMicroelectronics ensures exceptional efficiency and durability, making this component ideal for a variety of applications, from power supplies to automotive systems. Elevate your projects with a diode designed for peak performance that promises lower energy loss and longer service life, delivering value you can count on!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for reduced complexity in circuit design, making it easier to implement in various electronic applications.

Surface Mount: YES

Surface mount technology allows for a smaller footprint and easier integration into modern PCB designs.

Maximum Reverse Recovery Time: 0.02 us

A low reverse recovery time enhances the efficiency and speed of circuit switching, reducing power losses.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space utilization on the PCB, allowing for compact designs.

No. of Terminals: 2

Having two terminals simplifies the design and reduces potential points of failure.

Package Style (Meter): SMALL OUTLINE

The small outline package minimizes space requirements, making it ideal for space-constrained applications.

Application: EFFICIENCY

Designed to enhance overall system efficiency, making it a great choice for applications where power conservation is important.

Maximum Operating Temperature: 175 °C

High operating temperature capability ensures reliable performance in demanding environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish ensures good solderability and long-term reliability in connections.

Terminal Position: SINGLE

A single terminal position simplifies layout designs, improving manufacturing efficiency.

Case Connection: CATHODE

This type of connection allows for simplified circuit configuration, enhancing design flexibility.

Maximum Time At Peak Reflow Temperature (s): 30

This specification supports reliable soldering processes during assembly, crucial for component integrity.

Peak Reflow Temperature (°C): 260

A high peak reflow temperature indicates compatibility with modern soldering techniques, improving assembly efficiency.

Diode Type: RECTIFIER DIODE

Rectifier diodes are essential for converting alternating current (AC) to direct current (DC), making them critical in power supply applications.

Maximum Forward Voltage (VF): 0.95 V

A low forward voltage drop improves efficiency in power applications, leading to less wasted energy.

Maximum Output Current: 4 A

With a maximum output current of 4 A, this diode is suitable for medium-power applications, offering flexibility across different use cases.

Terminal Form: GULL WING

Gull wing terminals enhance the mechanical strength of connections and provide ease of inspection during assembly.

No. of Elements: 2

Having two elements allows for parallel operation, enhancing reliability and fault tolerance in designs.

Maximum Repetitive Peak Reverse Voltage: 200 V

A high peak reverse voltage rating ensures the diode can handle significant voltage spikes, improving system robustness.

Maximum Non-Repetitive Peak Forward Current: 50 A

This high rating allows the diode to withstand transient overcurrents, making it suitable for applications with potential current surges.

Diode Element Material: SILICON

Silicon is the most common semiconductor material, offering good efficiency, reliability, and performance across a wide range of applications.

Technical Specifications

Diodes & Rectifiers STTH802CB attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.02 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STTH802CB Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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