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STTH802B

STMicroelectronics

STTH802B by STMicroelectronics

STTH802B by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.03 µs and can handle up to 8 A output current. It operates at a max temp of 175 °C and features a compact surface mount design. Ideal for high-efficiency applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,369 parts In-Stock

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7,369

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Anansix

USA . 1,398 parts In-Stock

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1,398

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Digiode

USA . 134 parts In-Stock

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134

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,163 parts In-Stock

1+ parts

$0.116

100+ parts

-

1k+ parts

$0.104

10k+ parts

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1,163

$0.116

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$0.104

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MKK Technologies

India . 55 parts In-Stock

1+ parts

$0.218

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55

$0.218

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DigiPath Technology Company

USA . 55 parts In-Stock

1+ parts

$0.218

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55

$0.218

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AZTECH Wire

Italy . 65 parts In-Stock

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$14.070

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65

$14.070

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Corphita

USA . 2,529 parts In-Stock

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2,529

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Parana Technologies

USA . 1,631 parts In-Stock

1+ parts

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$0.139

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1,631

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$0.139

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Overview

Elevate your designs with the STTH802B from STMicroelectronics, a leader in innovative semiconductor solutions. This ultra-fast recovery rectifier diode enhances efficiency and reliability across various applications, from power supplies to automotive systems. With its compact surface mount design and exceptional thermal performance, the STTH802B ensures optimal operation under demanding conditions. Experience unmatched quality and performance that translates to superior product longevity and customer satisfaction.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental stressors, making the diode suitable for various applications.

Config: SINGLE

A single configuration allows for simpler circuit design and implementation, providing flexibility in various electronic applications.

Surface Mount: YES

Surface mount capability enables compact design in modern electronics, allowing for efficient use of space on circuit boards.

Maximum Reverse Recovery Time: 0.03 us

Fast reverse recovery time is crucial for high-frequency applications, improving efficiency and response in switching circuits.

Package Shape: RECTANGULAR

The rectangular shape facilitates organized layout on PCBs, enhancing ease of soldering and assembly processes.

No. of Terminals: 2

A two-terminal design simplifies connections and integration into circuits, reducing the complexity of arrangements.

Package Style (Meter): SMALL OUTLINE

Small outline packaging minimizes the footprint, making it ideal for space-constrained applications in consumer electronics.

Application: ULTRA FAST RECOVERY

Designed for ultra-fast recovery, this diode is optimal for applications needing quick switching, such as in power supplies and converters.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows for reliable performance in demanding environments, enhancing product longevity.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring stable connections over time.

Terminal Position: SINGLE

A single terminal position simplifies the integration process, making it easier to implement into different circuit designs.

Case Connection: CATHODE

Cathode connection is standard for rectifier configurations, ensuring proper functionality in circuit applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component is essential for converting AC power to DC, widely used in power supply and rectification applications.

Maximum Forward Voltage (VF): 0.9 V

A low maximum forward voltage drop enhances overall efficiency in power conversion, reducing energy loss during operation.

Maximum Output Current: 8 A

With a maximum output current of 8 A, this diode is capable of handling substantial loads, suitable for various power applications.

Terminal Form: GULL WING

Gull-wing terminals provide excellent soldering characteristics and mechanical stability in the mounted position, contributing to reliable performance.

Maximum Repetitive Peak Reverse Voltage: 200 V

A high peak reverse voltage rating is crucial for resisting breakdown, making this diode effective for high-voltage applications.

Maximum Non-Repetitive Peak Forward Current: 100 A

The high non-repetitive peak forward current rating allows the diode to handle surges, providing added reliability in transient conditions.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent conductivity and thermal stability, ensuring consistent performance over time.

Technical Specifications

Diodes & Rectifiers STTH802B attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.03 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH802B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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