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STTH8006W

STMicroelectronics

STTH8006W by STMicroelectronics

STTH8006W by STMicroelectronics is a high-voltage rectifier diode with a max reverse recovery time of 0.07 µs and can handle up to 80 A output current. It operates at temperatures up to 175 °C and features a 600 V peak reverse voltage rating. Ideal for demanding applications, it ensures reliable performance in power conversion systems.

Median Price

$12.000

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 28 parts In-Stock

1+ parts

$12.000

100+ parts

$7.500

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-

10k+ parts

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28

$12.000

$7.500

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Digiode

USA . 4,709 parts In-Stock

1+ parts

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4,709

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Vyrian

USA . 3,146 parts In-Stock

1+ parts

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3,146

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Anansix

USA . 1,606 parts In-Stock

1+ parts

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1,606

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Pegasus Components GmbH

Germany . 42 parts In-Stock

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42

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Dan-Mar Components

USA . 28 parts In-Stock

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28

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,104 parts In-Stock

1+ parts

$0.036

100+ parts

-

1k+ parts

$0.032

10k+ parts

-

2,104

$0.036

-

$0.032

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MKK Technologies

India . 1,734 parts In-Stock

1+ parts

$0.067

100+ parts

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1,734

$0.067

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DigiPath Technology Company

USA . 1,734 parts In-Stock

1+ parts

$0.067

100+ parts

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1,734

$0.067

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AZTECH Wire

Italy . 168 parts In-Stock

1+ parts

$15.890

100+ parts

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168

$15.890

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Corphita

USA . 2,681 parts In-Stock

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2,681

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Perfect Parts

USA . 932 parts In-Stock

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932

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Parana Technologies

USA . 656 parts In-Stock

1+ parts

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100+ parts

$0.043

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656

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$0.043

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Overview

Elevate your designs with the STTH8006W from STMicroelectronics, a leader in high-quality semiconductor solutions. This robust rectifier diode excels in high-voltage applications, ensuring reliability and performance at temperatures up to 175 °C. With its impressive output capacity and efficient reverse recovery time, it delivers exceptional value for demanding electronic circuits. Trust in STMicroelectronics for innovative technologies that enhance your projects and drive success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides excellent durability and resistance to environmental factors, ensuring longevity and reliability in demanding applications.

Config: SINGLE

A single configuration simplifies circuit design and reduces space requirements, making it ideal for compact electronic devices.

Maximum Reverse Recovery Time: 0.07 µs

The low reverse recovery time enhances efficiency and reduces switching losses, making this diode suitable for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs, facilitating easier integration into various designs.

No. of Terminals: 2

With only two terminals, installation is straightforward, minimizing potential errors during assembly.

Package Style (Meter): FLANGE MOUNT

Flange mount design offers secure installation options and improved thermal management, enhancing overall performance.

Application: HIGH VOLTAGE

Designed for high voltage applications, this diode ensures safe operation in systems where high voltage transients are expected.

Maximum Operating Temperature: 175 °C

A high operating temperature rating allows this diode to function in extreme conditions, expanding its usability across various industries.

Terminal Finish: MATTE TIN

The matte tin terminal finish reduces oxidation, ensuring better conductivity and reliability over prolonged periods.

Terminal Position: SINGLE

With a single terminal position, this diode saves space on the PCB and simplifies circuit layout.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, essential for power supply applications.

Maximum Forward Voltage (VF): 1.3 V

The low forward voltage drop minimizes power losses during operation, enhancing overall system efficiency.

Maximum Output Current: 80 A

Able to handle an output current of 80 A, this diode is suitable for high-load applications, ensuring reliable performance under heavy stress.

Terminal Form: THROUGH-HOLE

Through-hole design provides excellent mechanical stability and is suitable for high power applications where robustness is crucial.

Maximum Repetitive Peak Reverse Voltage: 600 V

With a high peak reverse voltage capability, this diode is safe to use in circuits subjected to high voltage fluctuations, enhancing reliability.

Maximum Non Repetitive Peak Forward Current: 500 A

This diode can withstand high non-repetitive forward currents, making it ideal for applications with momentary high power demands.

Diode Element Material: SILICON

Silicon as the diode element material is well-regarded for its stable performance and high temperature tolerance, ensuring long-term reliability.

Technical Specifications

Diodes & Rectifiers STTH8006W attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

80 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.07 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH8006W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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