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STTH60L04W

STMicroelectronics

STTH60L04W by STMicroelectronics

STTH60L04W by STMicroelectronics is a high-voltage rectifier diode with a max output current of 60 A and a reverse recovery time of just 0.05 µs. It operates at temperatures up to 175 °C, making it ideal for demanding applications. Its flange mount design ensures reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 13,037 parts In-Stock

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13,037

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Digiode

USA . 1,954 parts In-Stock

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1,954

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Anansix

USA . 1,214 parts In-Stock

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1,214

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 146 parts In-Stock

1+ parts

$0.052

100+ parts

-

1k+ parts

$0.046

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146

$0.052

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$0.046

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MKK Technologies

India . 1,728 parts In-Stock

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$0.097

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1,728

$0.097

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DigiPath Technology Company

USA . 1,728 parts In-Stock

1+ parts

$0.097

100+ parts

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1,728

$0.097

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AZTECH Wire

Italy . 418 parts In-Stock

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$18.590

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418

$18.590

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A-Z Elektronik GmbH

Germany . 6,521 parts In-Stock

1+ parts

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6,521

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Corphita

USA . 4,086 parts In-Stock

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4,086

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Parana Technologies

USA . 297 parts In-Stock

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$0.062

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297

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$0.062

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Overview

Unlock exceptional performance with the STTH60L04W from STMicroelectronics, a trusted leader in semiconductor innovation. This high-voltage rectifier diode excels in demanding applications, offering superior reliability and efficiency under extreme conditions. With a robust design that withstands temperatures up to 175 °C, it delivers unmatched value for power management solutions. Experience enhanced durability and optimized energy use—perfect for industrial and automotive sectors. Choose quality; choose STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making it suitable for various applications.

Config: SINGLE

A single diode configuration simplifies circuit design and integration, ideal for straightforward applications.

Maximum Reverse Recovery Time: 0.05 us

A low reverse recovery time enhances switching efficiency, making this diode suitable for high-speed applications.

Package Shape: RECTANGULAR

The rectangular shape offers efficient use of space on a PCB and is compatible with standard mounting techniques.

No. of Terminals: 2

Having two terminals allows for easy connectivity in most circuit designs, promoting versatile applications.

Package Style (Meter): FLANGE MOUNT

Flange mounting ensures secure attachment and improved thermal management, suitable for high power applications.

Application: HIGH VOLTAGE

Designed for high voltage applications, this diode ensures reliability and safety in demanding environments.

Maximum Operating Temperature: 175 °C

With a high operating temperature, this diode can function effectively in extreme conditions without failure.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and reduces the risk of corrosion, ensuring reliable electrical connections.

Terminal Position: SINGLE

A single terminal position simplifies layout and integration into circuit boards, enhancing design efficiency.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), essential for power supply applications.

Maximum Forward Voltage (VF): 1 V

A low forward voltage drop improves energy efficiency in the circuit and reduces heat generation.

Maximum Output Current: 60 A

A high output current rating supports substantial load requirements, making this diode suitable for power-intensive applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical stability, ensuring reliable connections in demanding environments.

Maximum Repetitive Peak Reverse Voltage: 400 V

A high voltage rating of 400 V ensures the diode can withstand significant reverse voltage spikes without failure.

Maximum Non-Repetitive Peak Forward Current: 600 A

This diode can handle large current surges, making it resilient in transient conditions and protecting other components in the circuit.

Diode Element Material: SILICON

Silicon as a material is well-known for its excellent electrical properties, providing improved performance and stability.

Technical Specifications

Diodes & Rectifiers STTH60L04W attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

600 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

60 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH60L04W Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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