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STTH3L06B-TR

STMicroelectronics

STTH3L06B-TR by STMicroelectronics

STTH3L06B-TR by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode. It features a max reverse recovery time of 0.085 µs, operates at up to 175 °C, and supports 600 V peak reverse voltage. Ideal for efficient power management in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,498 parts In-Stock

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4,498

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Vyrian

USA . 2,573 parts In-Stock

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Anansix

USA . 1,482 parts In-Stock

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1,482

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IDEA Electronic Components Group

UK . 1,864 parts In-Stock

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$0.132

100+ parts

-

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$0.119

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1,864

$0.132

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$0.119

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MKK Technologies

India . 334 parts In-Stock

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$0.249

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334

$0.249

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DigiPath Technology Company

USA . 334 parts In-Stock

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$0.249

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334

$0.249

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AZTECH Wire

Italy . 339 parts In-Stock

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$17.060

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339

$17.060

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 20,031 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Corphita

USA . 3,250 parts In-Stock

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3,250

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Parana Technologies

USA . 1,270 parts In-Stock

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$0.158

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1,270

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$0.158

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Overview

Unlock superior performance with the STTH3L06B-TR rectifier diode from STMicroelectronics. Renowned for quality and innovation, STMicroelectronics ensures this high-voltage, ultra-fast recovery diode excels in demanding applications. With its compact design and robust reliability, it delivers exceptional efficiency while minimizing energy loss. Elevate your electronic projects with this powerful component that promises not just functionality, but also peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, ensuring reliability in various applications.

Config: SINGLE

With a single configuration, this diode is versatile for a variety of circuit designs and simplifies installation.

Surface Mount: YES

Being a surface mount device allows for efficient space usage on PCBs and facilitates automated assembly.

Maximum Reverse Recovery Time: 0.085 µs

A low reverse recovery time enhances switching performance, making it ideal for high-speed applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization and thermal dissipation on the PCB.

No. of Terminals: 2

Having only two terminals simplifies connections and minimizes layout complexity.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact designs, which is important in space-constrained applications.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage ultra-fast recovery, this diode is exceptional for applications requiring rapid switching.

Maximum Operating Temperature: 175 °C

The high operating temperature rating ensures reliability and performance in demanding thermal environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and ensures robust connections in assembly processes.

Terminal Position: SINGLE

With a single terminal position, the device allows for easy integration into circuits without complex layouts.

Case Connection: CATHODE

The cathode connection is standard for rectifier diodes, ensuring compatibility with most circuit designs.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this component is vital for converting AC to DC, making it essential in power applications.

Maximum Forward Voltage (VF): 1.05 V

The low forward voltage drop helps in reducing power loss and improving energy efficiency in circuits.

Maximum Output Current: 3 A

With a maximum output current of 3 A, this diode is suitable for medium power applications.

Terminal Form: GULL WING

The gull wing terminal form provides excellent mechanical strength and enhances PCB mounting reliability.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high peak reverse voltage allows this diode to be used in applications that require handling substantial voltage spikes.

Maximum Non Repetitive Peak Forward Current: 40 A

The ability to handle high non-repetitive peak forward currents makes it suitable for applications with sudden current surges.

Diode Element Material: SILICON

Using silicon as the diode element material ensures excellent conductivity and efficiency in rectification.

Technical Specifications

Diodes & Rectifiers STTH3L06B-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.085 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH3L06B-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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