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STTH30L06PI

STMicroelectronics

STTH30L06PI by STMicroelectronics

STTH30L06PI by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode, featuring a max reverse recovery time of 0.09 µs and a peak reverse voltage of 600 V. It supports up to 30 A output current and operates at temperatures up to 175 °C. Ideal for applications requiring efficient power management in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,379 parts In-Stock

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4,379

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Vyrian

USA . 3,770 parts In-Stock

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3,770

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Anansix

USA . 2,742 parts In-Stock

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2,742

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,472 parts In-Stock

1+ parts

$0.139

100+ parts

-

1k+ parts

$0.125

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1,472

$0.139

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$0.125

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MKK Technologies

India . 2,145 parts In-Stock

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$0.261

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2,145

$0.261

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DigiPath Technology Company

USA . 2,145 parts In-Stock

1+ parts

$0.261

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2,145

$0.261

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AZTECH Wire

Italy . 870 parts In-Stock

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$17.580

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870

$17.580

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Component Stockers USA

USA . 784 parts In-Stock

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$99.990

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784

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 25,778 parts In-Stock

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25,778

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Corphita

USA . 2,542 parts In-Stock

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2,542

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Parana Technologies

USA . 1,709 parts In-Stock

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$0.166

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1,709

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$0.166

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Overview

Elevate your designs with the STTH30L06PI from STMicroelectronics, a leader in high-performance electronic components. This ultra-fast recovery rectifier diode delivers unmatched reliability and efficiency for high-voltage applications, ensuring optimal performance even in demanding environments. With an impressive temperature range and robust construction, it’s perfect for industrial, automotive, and renewable energy projects. Choose STMicroelectronics for quality you can trust and experience superior operational benefits that drive your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers excellent durability and resistance to environmental factors, making this diode suitable for a variety of applications.

Config: SINGLE

The single configuration allows for straightforward integration into circuits, simplifying design and reducing potential failure points.

Maximum Reverse Recovery Time: 0.09 μs

A low reverse recovery time enables this diode to switch quickly, making it ideal for high-speed applications and reducing power losses.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easier PCB layout, optimizing design space and enhancing thermal management.

No. of Terminals: 2

With only two terminals, this diode simplifies connection to circuits and minimizes the complexity of board design.

Package Style (Meter): FLANGE MOUNT

The flange mount style ensures secure attachment to heatsinks or PCBs, improving thermal performance and reliability under high load conditions.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY

Designed for high voltage ultra-fast recovery applications, this diode can handle demanding environments and ensure efficient performance.

Maximum Operating Temperature: 175 °C

A higher maximum operating temperature rating allows this diode to function reliably in extreme conditions, enhancing its versatility.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and corrosion resistance, ensuring long-term reliability in electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies design layout and can lead to improved performance by reducing potential interference.

Case Connection: ISOLATED

The isolated case connection increases safety and protects components from unintended electrical paths, supporting reliable operation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting alternating current (AC) to direct current (DC), making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1.25 V

A low forward voltage drop ensures efficient power conversion with minimal energy loss, enhancing the overall efficiency of the circuitry.

Maximum Output Current: 30 A

With a maximum output current of 30 A, this diode is capable of handling substantial loads, making it suitable for high-power applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides reliable mechanical strength and stable electrical connections, ensuring durability in challenging environments.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high repetitive peak reverse voltage rating allows this diode to be used in high-voltage circuits, broadening its application range.

Maximum Non-Repetitive Peak Forward Current: 160 A

The ability to handle non-repetitive peak forward currents of up to 160 A makes this diode robust against surges, ensuring reliable performance in transient conditions.

Diode Element Material: SILICON

Silicon as the diode element material ensures reliable operation and excellent electrical characteristics, making it a standard choice for semiconductor devices.

Technical Specifications

Diodes & Rectifiers STTH30L06PI attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

160 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.09 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTH30L06PI Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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